Spin-to-Charge Conversion Manipulated by Fine-Tuning the Fermi Level of Topological Insulator (Bi 1– x Sb x ) 2 Te 3
Shu Hsuan Su,Pei-Yu Chuang,Jung-Chuan Lee,Cheong-Wei Chong,Ya Wen Li,Zong Mou Lin,Yi-Chun Chen,Cheng-Maw Cheng,Jung-Chun-Andrew Huang
DOI: https://doi.org/10.1021/acsaelm.1c00182
IF: 4.494
2021-07-06
ACS Applied Electronic Materials
Abstract:The efficiency of spin-to-charge conversion is a key parameter in determining the performance of emerging spintronic devices. In the topological surface state of a topological insulator (TI), the spin-momentum locking effect offers a great possibility for efficient spin-to-charge conversion. Here, we report the relation between the Fermi level position <i>E</i><sub>F</sub> and spin-to-charge conversion efficiency in heterostructure Ni<sub>80</sub>Fe<sub>20</sub> (Py)/(Bi<sub>1–<i>x</i></sub>Sb<i><sub>x</sub></i>)<sub>2</sub>Te<sub>3</sub>. The band structure of (Bi<sub>1–<i>x</i></sub>Sb<i><sub>x</sub></i>)<sub>2</sub>Te<sub>3</sub> films becomes tailored by tuning the ratio of bismuth to antimony so that the position of the Fermi level <i>E</i><sub>F</sub> varies from the top side of the valence band to the bottom side of the conduction band through the in-gap surface Dirac cone. The result is consistent with the electronic behavior of the majority carriers varying from n-type to p-type. In spin-pumping measurements, we observed that the inverse Edelstein effect length (λ<sub>IEE</sub>) with a tuned <i>E</i><sub>F</sub> near the Dirac point is significantly enhanced, indicating that the spin-charge conversion is determined mainly by the topological surface state. These results demonstrate that fine-tuning of <i>E</i><sub>F</sub> in a TI-based heterostructure is critical to maximizing the efficiency of spin-to-charge conversion using a spin-momentum locking mechanism.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.1c00182?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.1c00182</a>.Determination of the <i>x</i> value in (Bi<sub>1–<i>x</i></sub>Sb<i><sub>x</sub></i>)<sub>2</sub>Te<sub>3</sub>, the carrier concentration of the surface state, dependence of the FMR resonance frequency, the relation between the peak-to-peak linewidth of FMR spectra and the microwave frequency, the spin-current density and charge density, large-area surface morphology of (Bi<sub>1–<i>x</i></sub>Sb<i><sub>x</sub></i>)<sub>2</sub>Te<sub>3</sub> films, numerical fitting procedure for analysis of the measured voltage, control experiment of Py/MgO/(Bi<sub>0.3</sub>Sb<sub>0.7</sub>)<sub>2</sub>Te<sub>3</sub>, sign of spin-to-charge conversion in topological insulator (Bi<sub>1–<i>x</i></sub>Sb<i><sub>x</sub></i>)<sub>2</sub>Te<sub>3</sub>, control experiment of Py/Cu/(Bi<sub>0.3</sub>Sb<sub>0.7</sub>)<sub>2</sub>Te<sub>3</sub>, and ARPES and XPS of the Py/(Bi<sub>0.22</sub>Sb<sub>0.78</sub>)<sub>2</sub>Te<sub>3</sub> crystal (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.1c00182/suppl_file/el1c00182_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,engineering, electrical & electronic