Room Temperature Spin to Charge Conversion in Amorphous Topological Insulating Gd-Alloyed BixSe1-x/CoFeB Bilayers

Protyush Sahu,Yifei Yang,Yihong Fan,Henri Jaffres,Jun-Yang Chen,Xavier Devaux,Yannick Fagot-Revurat,Sylvie Migot,Enzo Rongione,Sukdheep Dhillon,Tongxin Chen,Pambiang Abel Dainone,Jean-Marie George,Yuan Lu,Jian-Ping Wang
2023-07-31
Abstract:Disordered topological insulator (TI) films have gained intense interest by benefiting from both the TIs exotic transport properties and the advantage of mass production by sputtering. Here, we report on the clear evidence of spin-charge conversion (SCC) in amorphous Gd-alloyed BixSe1-x (BSG)/CoFeB bilayers fabricated by sputtering, which could be related to the amorphous TI surface states. Two methods have been employed to study SCC in BSG/CoFeB(5 nm) bilayers with different BSG thicknesses. Firstly, spin pumping is used to generate a spin current in CoFeB and to detect SCC by inverse Edelstein effect. The maximum SCC efficiency (SCE) is measured as large as 0.035 nm in a 6 nm thick BSG sample, which shows a strong decay when tBSG increases due to the increase of BSG surface roughness. The second method is the THz time-domain spectroscopy, which reveals a small tBSG dependence of SCE, validating the occurrence of a pure interface state related SCC. Furthermore, our angle-resolved photoemission spectroscopy data show dispersive two-dimensional surface states that cross the bulk gap until to the Fermi level, strengthening the possibility of SCC due to the amorphous TI states. Our studies provide a new experimental direction towards the search for topological systems in the amorphous solids.
Materials Science
What problem does this paper attempt to address?
The paper attempts to address the problem of achieving room-temperature spin-to-charge conversion (SCC) in amorphous topological insulator (TI) thin films. Specifically, the researchers observed a significant spin-to-charge conversion effect in the amorphous Gd-doped Bi<sub>x</sub>Se<sub>1-x</sub> (BSG) and CoFeB bilayer structure and explored the relationship between this effect and the surface states of the amorphous topological insulator. The paper investigates spin-to-charge conversion through two methods: one is spin pumping combined with the inverse Edelstein effect (IEE), and the other is THz time-domain spectroscopy. The study shows that in a 6 nm thick BSG sample, the spin-to-charge conversion efficiency (SCE) reached 0.035 nm, but the conversion efficiency rapidly decreased with increasing BSG thickness. Additionally, angle-resolved photoemission spectroscopy (ARPES) data displayed dispersed 2D surface states that traverse the bandgap of the bulk material up to the Fermi level, further confirming the spin-to-charge conversion effect caused by the surface states of the amorphous topological insulator. This research provides a new experimental direction for exploring topological systems in amorphous solids.