Abstract:Topological materials are of high interest due to the promise to obtain low power and fast memory devices based on efficient spin-orbit torque switching or spin-orbit magnetic state read-out. In particular, sputtered polycrystalline Bi$_x$Se$_{1-x}$ is one of the materials with more potential for this purpose since it is relatively easy to fabricate and has been reported to have a very high spin Hall angle. We study the spin-to-charge conversion in Bi$_x$Se$_{1-x}$ using the spin pumping technique coming from the ferromagnetic resonance in a contiguous permalloy thin film. We put a special emphasis on the interfacial properties of the system. Our results show that the spin Hall angle of Bi$_x$Se$_{1-x}$ has an opposite sign to the one of Pt. The charge current arising from the spin-to-charge conversion is, in contrast, lower than Pt by more than one order of magnitude. We ascribe this to the interdiffusion of Bi$_x$Se$_{1-x}$ and permalloy and the changes in chemical composition produced by this effect, which is an intrinsic characteristic of the system and is not considered in many other studies.

What problem does this paper attempt to address?

### Problems the paper attempts to solve This paper aims to study the spin - charge conversion problem achieved in sputtered polycrystalline Bi$_x$Se$_{1 - x}$ through spin - pumping technology. Specifically, the author focuses on the following aspects: 1. **Exploration of high - efficiency spin - charge conversion materials**: As a topological insulator material, Bi$_x$Se$_{1 - x}$ is considered to have the potential for high - efficiency spin - charge conversion because it is relatively easy to prepare and has a reported high spin Hall angle ($\theta_{SH}$). However, the actual performance of this material and its interaction with the ferromagnetic layer interface still need further verification. 2. **Influence of interface characteristics on spin - charge conversion**: The paper particularly emphasizes the influence of interface properties on the system performance. Research shows that the interface diffusion between Bi$_x$Se$_{1 - x}$ and ferromagnetic permalloy (Py) will lead to changes in chemical composition, thereby affecting the injection efficiency of spin current and the spin - charge conversion efficiency. 3. **Measurement and comparison of spin Hall angles**: The author experimentally determined the spin Hall angle of Bi$_x$Se$_{1 - x}$ and compared it with other known materials (such as Pt). The results show that the sign of the spin Hall angle of Bi$_x$Se$_{1 - x}$ is the same as that of Pt, but the charge current it generates is more than one order of magnitude lower than that of Pt. 4. **Influence of interface diffusion on magnetic and spin - transport parameters**: Through transmission electron microscopy (TEM) and energy - dispersive X - ray spectroscopy (EDX) analysis, the author found that there is a strong element - diffusion phenomenon at the interface between Bi$_x$Se$_{1 - x}$ and Py. This diffusion leads to a decrease in the effective magnetization ($M_{eff}$) and an increase in the Gilbert damping constant ($\alpha$), thereby affecting the generation and transport of spin current. ### Main conclusions - The sign of the spin Hall angle of Bi$_x$Se$_{1 - x}$ is the same as that of Pt, but its spin - charge conversion efficiency is significantly lower than that of Pt. - The interface diffusion between Bi$_x$Se$_{1 - x}$ and Py seriously affects the magnetic and spin - transport characteristics of the system, resulting in a decrease in the effective magnetization and an increase in the Gilbert damping constant. - Interface diffusion and chemical composition inhomogeneity make the existing spin - conversion parameter estimation models no longer applicable, so more accurate characterization methods are required to evaluate the performance of these materials. Through these studies, the author emphasizes the importance of interface characteristics and composition uniformity when studying topological insulator materials such as Bi$_x$Se$_{1 - x}$, which is crucial for the development of high - efficiency spintronic devices.

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