Abstract:Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies. The fundamental spintronic device concepts such as creation, manipulation and detection of spin polarization has been demonstrated in semiconductors and spin transistor structures using both the electrical and optical methods. However, an unsolved challenge in the field is the realization of all electrical methods to control the spin polarization and spin transistor operation at ambient temperature. For this purpose, two-dimensional (2D) crystals offer a unique platform due to their remarkable and contrasting spintronic properties, such as weak spin-orbit coupling (SOC) in graphene and strong SOC in molybdenum disulfide (MoS$_2$). Here we combine graphene and MoS$_2$ in a van der Waals heterostructure to realize the electric control of the spin polarization and spin lifetime, and demonstrated a spin field-effect transistor (spin-FET) at room temperature in a non-local measurement geometry. We observe electrical gate control of the spin valve signal due to pure spin transport and Hanle spin precession signals in the graphene channel in proximity with MoS$_2$ at room temperature. We show that this unprecedented control over the spin polarization and lifetime stems from the gate-tuning of the Schottky barrier at the MoS$_2$/graphene interface and MoS$_2$ channel conductivity leading to spin interaction with high SOC material. The all-electrical creation, transport and control of the spin polarization in a spin-FET device at room temperature is a substantial step in the field of spintronics. It opens a new platform for the interplay of spin, charge and orbital degrees of freedom for testing a plethora of exotic physical phenomena, which can be key building blocks in future device architectures.

Charge to spin conversion in van der Waals metal NbSe2

Unconventional charge-spin conversion in Weyl-semimetal WTe2

Spin-to-charge conversion by spin pumping in sputtered polycrystalline Bi$_x$Se$_{1-x}$

All-electrical creation and control of giant spin-galvanic effect in 1T-MoTe2/graphene heterostructures at room temperature

Room temperature nonlocal detection of charge-spin interconversion in a topological insulator

Large spin-to-charge conversion at the two-dimensional interface of transition metal dichalcogenides and permalloy

Tunable room-temperature spin galvanic and spin Hall effects in van der Waals heterostructures

Spin-Charge Conversion In Inse Bilayers

Spin to charge conversion in MoS$_{2}$ monolayer with spin pumping

Towards the understanding of the origin of charge-current-induced spin voltage signals in the topological insulator Bi$_2$Se$_3$

Quantum Materials for Spin and Charge Conversion

Spin-charge Conversion in NiMnSb Heusler Alloy Films

Magnetic Proximity induced efficient charge-to-spin conversion in large area PtSe$_{2}$/Ni$_{80}$Fe$_{20}$ heterostructures

Terahertz Spin‐to‐Charge Current Conversion in Stacks of Ferromagnets and the Transition‐Metal Dichalcogenide NbSe2

Unveiling the polarity of the spin-to-charge current conversion in $Bi_2Se_3$

All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature

Unconventional charge-to-spin conversions in graphene/MoTe2 van der Waals heterostructures

Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at the Interface of Graphene/WS 2 Heterostructures at Room Temperature

Quantification of spin-charge interconversion in highly resistive sputtered Bi$_x$Se$_{1-x}$ with non-local spin valves

All-Electrical Spin Field Effect Transistor in van der Waals Heterostructures at Room Temperature