Abstract:In this work, a novel side‐gate multifunctional reconfigurable device based on simple BN‐MoS2 vdW heterostructures is proposed. Three different functions, including a diode, double‐side‐gate reconfigurable logic transistor, and top floating gate nonvolatile memory, are integrated in a single device. This device paves the way for integrating the same reconfigurable multifunctional devices to realize complex electronic systems. Developing 2D reconfigurable multifunctional devices is of great potential in further miniaturizing the chip area and simplifying circuit design. 2D van der Waals (vdW) heterostructures offer a novel approach to realizing reconfigurable multifunctional devices. Despite the numerous previous reports that have integrated various functions in a single 2D heterostructures device, most of those devices are based on a complex multilayer heterostructure or an air‐unstable channel material, limiting their ability to be applied in integrated circuits. There is an urgent need to develop 2D reconfigurable multifunctional devices that have a simple structure and stable electrical properties. In this work, a side‐gate reconfigurable device is illustrated based on simple BN‐MoS2 vdW heterostructures. Three different functions in a single device have been achieved, including a diode, double‐side‐gate reconfigurable logic transistor, and top floating gate memory. A lateral n+‐n homojunction is created along the MoS2 channel and the rectification ratio is above 105. Reconfigurable logic operations (OR, AND) can be achieved in a single double‐side‐gate device and the current on/off ratio is ≈t 104. Moreover, the device can act as a floating gate memory under back gate operation. Those results pave the way for integrating the same reconfigurable multifunctional devices to realize complex electronic systems.

Two-dimensional Complementary Gate-Programmable PN Junctions for Reconfigurable Rectifier Circuit

High-Quality Reconfigurable Black Phosphorus P-N Junctions

Two-dimensional Non-Volatile Programmable P–n Junctions

Homogeneous Palladium Diselenide pn‐Junction Diodes for Reconfigurable Circuit Applications

Reversible Half Wave Rectifier Based on 2D InSe/GeSe Heterostructure with Near‐Broken Band Alignment

Reconfigurable single-gate PdSe2/WS2 diode with high symmetry rectification

Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers.

Side‐Gate BN‐MoS2 Transistor for Reconfigurable Multifunctional Electronics

Two-dimensional reconfigurable electronics enabled by asymmetric floating gate

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

A reconfigurable transistor and memory based on a two-dimensional heterostructure and photoinduced trapping

Reconfigurable Vertical Phototransistor with MoTe2 Homojunction for High-Speed Rectifier and Multivalued Logical Circuits.

Van der Waals Multi‐Heterostructures (PN, PIN, and NPN) for Dynamic Rectification in 2D Materials

Nonvolatile Reconfigurable 2D Schottky Barrier Transistors

Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents

Full two-dimensional ambipolar CFET-like architecture for switchable logic circuits

Optoelectronic Reconfigurable Logic Gates Based on Two-Dimensional Vertical Field-Effect Transistors

A mode-balanced reconfigurable logic gate built in a van der Waals strata

Gate-Tunable Negative Differential Resistance Behaviors in a Hbn-Encapsulated BP-MoS2 Heterojunction

Gate-Controlled Bp-Wse2 Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics

Reconfigurable Multi-Function Logic Based On Graphene P-N Junctions