Abstract:Magnetic doping with transition metal ions is the most widely used approach to break timereversal symmetry in a topological insulator, a prerequisite for unlocking the TIs exotic potential. Recently, we reported the doping of Bi2Te3 thin films with rare earth ions, which, owing to their large magnetic moments, promise commensurately large magnetic gap openings in the topological surface states. However, only when doping with Dy has a sizable gap been observed in angle-resolved photoemission spectroscopy, which persists up to room-temperature. Although disorder alone could be ruled out as a cause of the topological phase transition, a fundamental understanding of the magnetic and electronic properties of Dy:Bi2Te3 remained elusive. Here, we present an X-ray magnetic circular dichroism, polarized neutron reflectometry, muon spin rotation, and resonant photoemission study of the microscopic magnetic and electronic properties. We find that the films are not simply paramagnetic but that instead the observed behavior can be well explained by the assumption of slowly fluctuating, inhomogeneous magnetic patches with increasing volume fraction as the temperature decreases. At liquid helium temperatures, a large effective magnetization can be easily introduced by the application of moderate magnetic fields, implying that this material is very suitable for proximity coupling to an underlying ferromagnetic insulator or in a heterostructure with transition metal-doped layers. However, the introduction of some charge carriers by the dopants cannot be excluded at least in these highly doped samples. Nevertheless, we find that the magnetic order is not mediated via the conduction channel in these rare earth doped samples and therefore magnetic order and carrier concentration are expected to be independently controllable. This is not generally the case for transition metal doped topological insulators.

Manipulating the Magneto-Resistance of Bi2Se3 Thin Films by Strontium Doping

Disorder-induced linear magnetoresistance in Sr-doped Bi2Se3 thin films

Simultaneous Magnetic and Charge Doping of Topological Insulators with Carbon.

Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators.

Magnetically Doped Semiconducting Topological Insulators

Microscopic effects of Dy-doping in the topological insulator Bi2Te3

Transport and material properties of doped BiSbX topological insulator films grown by physical vapor deposition

Transition from weak antilocalization to linear magnetoresistance by tuning structure geometry and chemical potential in nanostructured Bi2Se3 films

Weak localization and anti-localization in rare earth doped topological insulators

Magnetic Doping and Kondo Effect in Bi2Se3 Nanoribbons

Interplay Between Different Magnetisms in Cr-doped Topological Insulators.

Ferromagnetism of Magnetically Doped Topological Insulators in CrxBi2−xTe3 Thin Films

Modulation of crystal and electronic structures in topological insulators by rare-earth doping

Tailoring Magnetic Doping in the Topological Insulator Bi2Se3

The modulation of magnetism and charge carrier in magnetic topological insulator MnBi4Te7 by Pb and Sb co-doping

A comparative study of magnetic (Mn) and non-magnetic (In) elements-doped Bi2Se3 topological insulator: Structural, magnetic, transport, and weak anti-localization property exploration

Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3

Massive Dirac fermions and strong Shubnikov–de Haas oscillations in single crystals of the topological insulator Bi 2 Se 3 doped with Sm and Fe

Cr Doping-Induced Ferromagnetism in SnTe Thin Films

Growth and structural characterisation of Sr-doped Bi2Se3 thin films

Topological Driven Linear Magnetoresistance in Sb-doped MnBi2Te4