Preparation and first principle calculation of Cu2O thin films

Jiaolian Luo,Jiayong Lu,Anqi Yang,Yang Yang,Kun Wang,Xiang Song,Wenjiang Zhou,Debing Zhao
DOI: https://doi.org/10.1080/00150193.2022.2078113
2022-01-01
Ferroelectrics
Abstract:In this paper, nanostructured Cu2O thin films were prepared on glass substrates by magnetron sputtering. The effects of the O-2/Ar ratio and sputtering power on the preparation of Cu2O thin films were investigated. In order to verify its morphology and phase, we use scanning electron microscope and X-ray diffraction to test. The first principle is used to calculate the crystal structure of Cu2O, and the optical properties and electronic structure of Cu2O are calculated. Our structure shows that Cu2O is a direct band gap material with 2.144 eV. It has good absorption capacity in the ultraviolet region and high transmittance in the visible region, which is consistent with the experimental results. It can be used as an ideal electrode material for solar cells.
What problem does this paper attempt to address?