PREPARATION OF ZnO THIN FILM BY MAGNETRON SPUTTERING

Hexin Luan,Daming Zhuang

DOI: https://doi.org/10.3969/j.issn.0254-0096.2013.10.011

2013-01-01

Abstract:ZnO thin films were deposited by magnetron sputtering, which could be used as window layer in CuInxGa1-xSe2 solar cell. XRD, SEM, transmissivity tests were used to research and analyze the microstructures, surface morphologies and transmissivities of the ZnO film. The effects of process parameters for depositing intrinsic ZnO films including substrate temperature, partial pressure of oxygen were systematically studied. The results show that the films have poor crystallization and low transmissivity when the substrate temperature is low. During the substrate temperature increases, the films have more obvious preferred orientation growth, larger grain size, less defects density and higher transmissivity. When the substrate temperature is too high, the film have rough surfaces, lower transmissivity because of the scattering of light. When oxygen partial pressure is low, films grow insufficiently because of the lack of oxygen. If oxygen partial pressure is high, the film surface adsorbs a lot of oxygen during sputtering, and this hinders the growth of ZnO grains. Optimized process parameters were obtained as follows of vacuum pressure of 3.0 × 10-3Pa, sputtering pressure of 1.0Pa, substrate temperature of 200°C, partial pressure of oxygen of 2.0%, sputtering power of 0.5W/cm2, sputtering time of 30min.