Abstract:The paper proposes a single-event burnout (SEB) hardened trench-gate DMOS with HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> gate dielectric and a decelerating electric field layer in the parasitic NPN. The proposed device presents remarkable potential to tolerate SEB. High- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$k$</tex> gate dielectric (HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ) is adopted to obtain a higher channel doping concentration while maintaining the normal <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\text{TH}}$</tex> , thereby suppressing the secondary breakdown of parasitic NPN. The decelerating electric field layer will reduce the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta$</tex> of parasitic NPN. For the hardened trench gate DMOS with breakdown voltage of 572V under irradiation linear energy transfer value of 1pC/µm (96MeV/mg/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ), numerical results (without considering the self-heating effect) show that the SEB threshold voltage is 554V, while the conventional device's is 132V. The SEB threshold voltage is increased by 32%. When the LET value is smaller than 0.6pC/µm, the SEB threshold voltage is over 570V. The SEB threshold voltage of proposed device almost equals its original breakdown voltage. It is meaningful for SEB hardening design of power devices.

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