Abstract:Terahertz (THz) and sub-THz frequency emitter and detector technologies are receiving increasing attention, underpinned by emerging applications in ultra-fast THz physics, frequency-combs technology and pulsed laser development in this relatively unexplored region of the electromagnetic spectrum. In particular, semiconductor-based ultrafast THz receivers are required for compact, ultrafast spectroscopy and communication systems, and to date, quantum well infrared photodetectors (QWIPs) have proved to be an excellent technology to address this given their intrinsic ps-range response However, with research focused on diffraction-limited QWIP structures (lambda/2), RC constants cannot be reduced indefinitely, and detection speeds are bound to eventually meet un upper limit. The key to an ultra-fast response with no intrinsic upper limit even at tens of GHz is an aggressive reduction in device size, below the diffraction limit. Here we demonstrate sub-wavelength (lambda/10) THz QWIP detectors based on a 3D split-ring geometry, yielding ultra-fast operation at a wavelength of around 100 {\mu}m. Each sensing meta-atom pixel features a suspended loop antenna that feeds THz radiation in the ~20 m3 active volume. Arrays of detectors as well as single-pixel detectors have been implemented with this new architecture, with the latter exhibiting ultra-low dark currents below the nA level. This extremely small resonator architecture leads to measured optical response speeds - on arrays of 300 devices - of up to ~3 GHz and an expected device operation of up to tens of GHz, based on the measured S-parameters on single devices and arrays.

Mapping the slow and fast photoresponse of field-effect transistors to terahertz and infrared radiation

Picosecond-Scale Terahertz Pulse Characterization with Field-Effect Transistors

Broadband THz detection from 0.1 to 22 THz with large area field-effect transistors

High intensity study of THz detectors based on field effect transistors

Broadband THz Detection from 01 to 22 THz with Large Area Field-Effect Transistors

Ultrabroadband and Multiband Infrared/terahertz Photodetectors with High Sensitivity

High Performance Ternary Organic Phototransistors with Photoresponse Up to 2600 Nm at Room Temperature

Ultra-fast Transistor-Based Detectors for Precise Timing of Near Infrared and THz Signals.

Fast Photoelectric Conversion in the Near-Infrared Enabled by Plasmon-Induced Hot-Electron Transfer

Broadband Terahertz Detection With Zero-Bias Field-Effect Transistors Between 100 GHz and 11.8 THz With a Noise Equivalent Power of 250 pW/ $\sqrt{\text{Hz}}$ at 0.6 THz

Helmholtz-Zentrum Dresden-Rossendorf (HZDR) Broadband Terahertz Detection With Zero-Bias Field-Effect Transistors Between 100 GHz and 11.8 THz With a Noise Equivalent Power of 250 pW/√Hz at 0.6 THz

Numerical Simulation on the Voltage Response of Field Effect Transistor by Focused Terahertz Radiation

Symmetry Effects in Broadband, Room-Temperature Field Effect Transistor THz Detectors

Ultrafast voltage-tunable detectors for Terahertz radiation operating above 100K

Investigation of Parasitic Coupling of THz Radiation to a Large Area Field-Effect Transistor

Quantum-Probe Field Microscopy of Ultrafast Terahertz Excitations

Direct measurement of photoinduced transient conducting state in multilayer 2H-MoTe2

Ultrafast terahertz detectors based on three-dimensional meta-atoms

Few‐Layer Organic Crystalline Van Der Waals Heterojunctions for Ultrafast UV Phototransistors

High-speed long-wave infrared ultra-thin photodetectors

Micromechanical field-effect transistor terahertz detectors with optical interferometric readout