Abstract:Power dissipation is one of the most critical issues for nanoelectronic circuits. For low-power logic applications, Tunnel FET (TFET) and ferroelectric (FE) based negative-capacitance FET (NCFET) can break the fundamental limitation of subthreshold swing in conventional MOSFET. In this talk, from the perspective of mechanism engineering, a new kind of steep-slope device with hybrid operation mechanism is presented with the state-of-the-art comprehensive electric properties, fundamentally addressing the issue of low drive current in conventional TFETs [1-3]. Furthermore, a novel energy-efficient TFET-CMOS hybrid foundry platform based on 300nm CMOS baseline process is also demonstrated for power-constraint AIoT applications [4-5]. For FE-HfO2-based NCFET devices, the possibility of NCFET as a steep-slope device for high-speed and low-voltage operation will be re-assessed based on our proposed dynamic negative capacitance theory [6-7]. Besides, by exploiting the inherent physics of FE polarization switching, this talk will present that ferroelectric-based devices can be utilized for ultralow hardware-cost and high energy-efficient solutions for emerging computing applications. As an example, by utilizing the non-volatile polarization switching dynamics and three-terminal structure of hafnia-based FeFET device, we propose novel Leaky-FeFET based designs to mimic biological neurons [8-9], and a novel FeFET-based time-domain computing in memory system with the record highest area and energy efficiency [10]. By combing the features of FE layer with TFET device, a novel ferroelectric TFET (FeTFET) based content addressable memory cell with only one transistor is proposed and experimentally demonstrated [11], showing its great potential for area- and energy-efficient machine learning applications.

Computational understanding role of vacancies and distortions in wurtzite ferroelectric memory materials: implications for device miniaturization

Understanding effect of distortions and vacancies in wurtzite AlScN ferroelectric memory materials: Vacancy-induced multiple defect state types and relaxation dependence in transition energy levels

Exploring tungsten-oxygen vacancy synergy: Impact on leakage characteristics in Hf0.5Zr0.5O2 ferroelectric thin films

Novel Tunnel- and Ferroelectric-based Devices by Mechanism Engineering for Ultra-Low Power Applications

Nonvolatile Ferroelectric Field-Effect Transistors.

Reconfigurable Quasi-Nonvolatile Memory/Subthermionic FET Functions in Ferroelectric-2D Semiconductor vdW Architectures

Ferroelectric Domain Wall Memory and Logic

Exploiting Ferroelectric FETs for Low-Power Non-Volatile Logic-in-memory Circuits

Nonvolatile Memory and Computing Using Emerging Ferroelectric Transistors.

Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor

Vacancy-Induced Synaptic Behavior in 2D WS2 Nanosheet-Based Memristor for Low-Power Neuromorphic Computing.

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

Two-dimensional Van Der Waals Ferroelectric Field-Effect Transistors Toward Nonvolatile Memory and Neuromorphic Computing

Density functional theory insight into metal ions and vacancies for improved performance in storage devices

Wurtzite and fluorite ferroelectric materials for electronic memory

A Physics-Based Compact Model of Ferroelectric Tunnel Junction for Memory and Logic Design

Ferroelectric FET Based TCAM Designs for Energy Efficient Computing

Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices

Sensing single domains and individual defects in scaled ferroelectrics

Van der Waals engineering of ferroelectric heterostructures for long-retention memory

Van der Waals Ferroelectrics: Theories, Materials and Device Applications