Abstract:In this work, we demonstrate the suitability of Reconfigurable Ferroelectric Field-Effect- Transistors (Re-FeFET) for designing non-volatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy landscape within a homojunction of a 2D tungsten diselenide (WSe$_2$) layer is achieved by independently controlling two split-gate electrodes made of a ferroelectric 2D copper indium thiophosphate (CuInP$_2$S$_6$) layer. Controlling the state encoded in the Program Gate enables switching between p, n and ambipolar FeFET operating modes. The transistors exhibit on-off ratios exceeding 10$^6$ and hysteresis windows of up to 10 V width. The homojunction can change from ohmic-like to diode behavior, with a large rectification ratio of 10$^4$. When programmed in the diode mode, the large built-in p-n junction electric field enables efficient separation of photogenerated carriers, making the device attractive for energy harvesting applications. The implementation of the Re-FeFET for reconfigurable logic functions shows how a circuit can be reconfigured to emulate either polymorphic ferroelectric NAND/AND logic-in-memory or electronic XNOR logic with long retention time exceeding 10$^4$ seconds. We also illustrate how a circuit design made of just two Re-FeFETs exhibits high logic expressivity with reconfigurability at runtime to implement several key non-volatile 2-input logic functions. Moreover, the Re-FeFET circuit demonstrates remarkable compactness, with an up to 80% reduction in transistor count compared to standard CMOS design. The 2D van de Waals Re-FeFET devices therefore exhibit groundbreaking potential for both More-than-Moore and beyond-Moore future of electronics, in particular for an energy-efficient implementation of in-memory computing and machine learning hardware, due to their multifunctionality and design compactness.

Reconfigurable Quasi-Nonvolatile Memory/Subthermionic FET Functions in Ferroelectric-2D Semiconductor vdW Architectures

Reconfigurable Quasi‐Nonvolatile Memory/Subthermionic FET Functions in Ferroelectric–2D Semiconductor Vdw Architectures (adv. Mater. 15/2022)

Van der Waals engineering of ferroelectric heterostructures for long-retention memory

Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor

Nonvolatile Ferroelectric Field-Effect Transistors.

Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits

A Gate Programmable van der Waals Metal‐Ferroelectric‐Semiconductor Vertical Heterojunction Memory

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Gate-Coupling-Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van Der Waals Ferroelectric Heterojunctions.

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Reconfigurable van der Waals Ferroionic Barristor for Multifunctional Nanoelectronics

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Two-dimensional Van Der Waals Ferroelectric Field-Effect Transistors Toward Nonvolatile Memory and Neuromorphic Computing

Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides As Nonvolatile Memory

Ferroelectric Perovskite/MoS2 Channel Heterojunctions for Wide-Window Nonvolatile Memory and Neuromorphic Computing.

A ferroelectric fin diode for robust non-volatile memory

A Semi-Floating Gate Memory Based on Van Der Waals Heterostructures for Quasi-Non-volatile Applications

Reconfigurable logic-in-memory circuits with ferroelectric nanosheet field-effect transistors

Nonvolatile Logic Inverters Based on 2D CuInP2S6 Ferroelectric Field Effect Transistors

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors