Abstract:In this work, the packaging design and development of a high voltage (> 15 kV), high current (120 A) silicon carbide (SiC) multi-chip power module (MCPM) will be presented. The module implements a MCPM packaging strategy which itself uses subassemblies to reduce manufacturing costs through reworkability. The use of solderless internal connections aids in reducing cost both by simplifying the assembly process as well as enabling a high level of flexibility in the manufacturing process in order to drive down costs by increasing yield. A wire bondless flip-chip die interconnection scheme has been developed in parallel with a more traditional wire bonded method. Both presented approaches utilize a common set of parts with minimal differences due to the divergent portions of each interconnection scheme. Device neutrality in this design ensures that a variety of die types from any manufacturer may be housed in a number of arrangements depending on the requirements of the end-use application without requiring significant redesign effort for each new application or improvement in device technology. The SiC MCPM is constructed using high temperature capable materials, enabling operation at high junction temperatures. This leads to the ability to design a small, low profile module with low parasitic inductances and a small junction to case thermal resistance. A low module thermal resistance makes it possible to significantly reduce the size and complexity of the cooling systems, ultimately, reducing the size of the system. Thus, this novel high voltage SiC MCPM represents a significant step forward in high voltage switching applications. This paper discusses the overall mechanical design of the SiC high voltage MCPM; the three-dimensional finite-element modeling and analysis of the thermal and electrical characteristics of the high voltage power module are also presented.

Design and Characterization of 4.5kv/ $15\mathrm{m}\omega$ SiC SuperMOS Half-bridge Module

Suppression switching oscillation in three-phase inverter with 1.7kV/300A SiC modules

ZVS range extension of 10A 15kV SiC MOSFET based 20kW Dual Active Half Bridge (DHB) DC-DC converter

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Design of Low Parasitic Inductance SiC MOSFETs Halfbridge Power Modules

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

1700 V full-SiC half-bridge power module with low switching loss

Flexible Epoxy Resin Substrate Based 1.2 Kv SiC Half Bridge Module with Ultra-low Parasitics and High Functionality

A Novel SiC MOSFET Module for High-power Soft-switching Converter

Characterization of a Bare-die SiC-based, Wirebond-less, Integrated Half-bridge with Multi-functional Bus-Bars

The Design and Development of a 15 kV SiC Half-Bridge Multi-Chip Power Module for Medium Voltage Applications

An Indirect Series-Connected SiC MOSFET Power Module with Voltage Self-Balance

High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module

10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field

A Quasi-Two-Level Medium-Voltage SiC MOSFET Power Module with Low Loss and Voltage Self-Balance

A Low-Cost High-Performance Voltage Sensing Circuit with Proactive Parameter Design Compensation Network for SiC MOSFETs.

A 10kV/200A SiC MOSFET module with series-parallel hybrid connection

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

Layout of Series-connected SiC MOSFET Devices for Medium Voltage Applications