Abstract:To take full advantages of Wide Bandgap power semiconductor devices, breakthroughs on power module development are heavily explored nowadays. This paper introduces a 1.2kV SiC half bridge intelligent power module utilizing 80μm flexible epoxy-resin as substrates instead of traditional Direct-bonded Copper, for better thermal-stress management and lower cost. The investigation on the flexible epoxy-resin material indicates that it has low leakage current even at 250 °C, and high thermal conductivity up to 8 W/mK. No bonding wires are applied in the half bridge power module, instead, double-side solderable SiC MOSFET and diodes are fabricated and utilized for low parasitics and double-side cooling function. To further decrease the entire parasitic inductance on the power loop, a “Stack Structure” is proposed in this work to vertically connect highside and lowside switches with lower interconnection path than traditional power module technology. Simulation indicates that the parasitic inductance on the power loop is less than 1.5 nH. More functionality is achieved by integrating the main power stage with gate driver circuits. Digital isolations are also included in the half bridge module, together with a Low Dropout regulator to eliminate the numbers of auxiliary power supply required by the power module. The size of the entire module is about 35mm × 15mm ×7mm. Electrical simulations and measurements, including leakage current, parasitic extractions, device characteristics, verified that the designed module can work properly with no degradation on the SiC devices, with 12ns turn-off and 48ns turn-on at 800V bus voltage, and 0.63 mJ, 0.23 mJ as turn-on and turn-off loss, respectively.

A Modular and Performance-Tunable Silicon Carbide Half-Bridge Building Block with Digital Gate Driver

Design of Low Parasitic Inductance SiC MOSFETs Halfbridge Power Modules

Characterization of a Bare-die SiC-based, Wirebond-less, Integrated Half-bridge with Multi-functional Bus-Bars

Performance Optimization of A 1.2kv SiC High Density Half Bridge Power Module in 3D Package

Design of a High-Power Power Electronics Building Block Based on SiC MOSFET Modules

A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker

Flexible Epoxy Resin Substrate Based 1.2 Kv SiC Half Bridge Module with Ultra-low Parasitics and High Functionality

1700 V full-SiC half-bridge power module with low switching loss

An 800V/300 Kw, 44 Kw/l Air-Cooled SiC Power Electronics Building Block (PEBB).

An Improved SiC MOSFET-gate Driver Integrated Power Module with Ultra Low Stray Inductances

A Double-sided Cooled Power Module with Embedded Decoupling Capacitors

Integrated SiC MOSFET module with ultra low parasitic inductance for noise free ultra high speed switching

Dynamic Performance of 6.5kv/400a SiC MOSFET Module and Its Gate Driver

A Single Gate Driver Based Solid-State Circuit Breaker Using Series Connected SiC MOSFETs

A 1200 V/200 A Half-Bridge Power Module Based on Si IGBT/SiC MOSFET Hybrid Switch

An Integrated Gate Driver Based on SiC MOSFETs Adaptive Multi-Level Control Technique

3.38 Mhz Operation of 1.2kv SiC MOSFET with Integrated Ultra-Fast Gate Drive

A Double-Sided Cooling 6.5kv SiC MOSFET Power Module with Insulation Enhancement Design

An Indirect Series-Connected SiC MOSFET Power Module with Voltage Self-Balance

Packaging and Characterization of an Ultra Compact 1200V PCB SiC MOSFET Half-Bridge Module