Abstract:The interaction of radiation with three-dimensional (3D) electronic devices can be determined through the detection of single-event effects (SEU). In this study, we propose a method for the evaluation of SEUs in 3D static random-access memories (SRAMs) induced by heavy-ion irradiation. The cross-sections (CSs) of different tiers, as a function of the linear energy transfer (LET) under high, medium, and low energy heavy-ion irradiation, were obtained through Monte Carlo simulations. The simulation results revealed that the maximum value of the CS was obtained under the medium-energy heavy-ion penetration, and the effect of penetration range of heavy ions was observed in different tiers of 3D-stacked devices. The underlying physical mechanisms of charge collection under different heavy-ion energies were discussed. Thereafter, we proposed an equation of the critical heavy-ion range that can be used to obtain the worst CS curve was proposed. Considering both the LET spectra and flux of galactic cosmic ray (GCR) and the variation in the heavy-ion Bragg peak values with the atomic number, we proposed a heavy-ion irradiation test guidance for 3D-stacked devices. In addition, the effectiveness of this method was verified through simulations of the three-tier vertically stacked SRAM and the ultrahigh-energy heavy-ion irradiation experiment of the two-tier vertically stacked SRAM. this study provides a theoretical framework for the detection of SEUs induced by heavy-ion irradiation in 3D-integrated devices.

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A METHOD FOR PROCESSING SEU DATA

Experimental Studies of Single-Event Effects Induced by Heavy Ions

Preliminary Single Event Effect Distribution Investigation on 28 Nm SoC Using Heavy Ion Microbeam

Prediction of Single Event Upset Critical Charge and Sensitive Volume Depth by Energy Deposition Analysis of Low Energy Protons

Experimental Study of Single Event Effects Induced by Heavy Ions

Measurement of Single Event Effect cross section induced by monoenergetic protons on a 130 nm ASIC

Single-event Effects Induced by Medium-Energy Protons in 28 Nm System-on-chip

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Prediction of Low-Let Ion Induced Single Event Upset Cross Sections for Advanced SRAM

Study of single event effects (SEE) of semiconductor device induced by heavy ion irradiation

First Principles Simulation Technique for Characterizing Single Event Effects

L-shell X-Ray Production Cross Sections in 50sn by 100 Kev–300 Kev Protons

Heavy ion induced single event effects in semiconductor device1This subject was supported by the Chinese Academy of Sciences.1

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LET spectra of proton energy levels from 50 to 500 MeV and their effectiveness for single event effects characterization of microelectronics

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Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs

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Microbeam Heavy-Ion Single-Event Effect on Xilinx 28-nm System on Chip