Abstract:Considering the technical status and existing problems of traditional silicon wafer chemical mechanical polishing (CMP), especially for the diameter of silicon wafer increasing, constantly, the surface quality and efficiency of silicon wafer polishing are becoming an urgent problem to be solved, so the research subject of ultrasonic vibration hybrid polishing new technique was proposed. By means of mechanism theoretical analysis research, firstly, the processing mechanism of hybrid polishing was studied systematically. An investigation of polishing mechanisms based on the micro-contact model between the polishing pad and the polishing surface of silicon wafer was developed. Polishing mechanism theoretical analysis shows that when ultrasonic vibrations combined with mechanical and chemical, the performance of polishing slurry is improved in the process of CMP, therefore to create favorable conditions. To verify the established theory, then, a series of experiments to investigate the traditional CMP are conducted, as well as the polishing tool with the forms of ultrasonic vibration, the polishing pad, the polishing surface quality, velocity at polishing point v, and slurry supplying Q on silicon wafer polishing. Experiment findings showed that, in the same polishing conditions, especially, hybrid polishing by ultrasonic-elliptic-vibration has gained more advantage over the effect of silicon wafer polishing. When ultrasonic-elliptic-vibration is put in polishing tool, the silicon wafer polished surface roughness Ra from the traditional method of polishing 0.077μm going down to the 0.042μm, the no-smooth rate KR which describes the polished surface morphology is significantly improved, and the material removal rate increases by 18%. Experimental research findings of the surface quality and the material removal mechanism are shown to be consistent with the theoretical analysis.

Auxiliary mechanism of in-situ micro-nano bubbles in oxide chemical mechanical polishing

Chemically-induced Active Micro-Nano Bubbles Assisting Chemical Mechanical Polishing: Modeling and Experiments

Polishing of Zirconia Ceramics by Chemically-Induced Micro-Nano Bubbles

Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing

Chemical mechanical polishing of silicon carbide (SiC) based on coupling effect of ultrasonic vibration and catalysis

Oxidation Anisotropy of 4H-Sic Wafers During Chemical-Mechanical Polishing

Optimization of polishing fluid composition for single crystal silicon carbide by ultrasonic assisted chemical-mechanical polishing

High efficiency polishing of silicon carbide by applying reactive non-aqueous fluids to fixed abrasive pads

Achieving Ultralow Surface Roughness and High Material Removal Rate in Fused Silica Via a Novel Acid SiO2 Slurry and Its Chemical-Mechanical Polishing Mechanism

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Development of a novel chemical mechanical polishing slurry and its polishing mechanisms on a nickel alloy

Mechanism and Experimental Investigation on Silicon Wafer Hybrid Polishing by Ultrasonic-Elliptic-Vibration Chemical-Mechanical

Single crystal silicon wafer polishing by pretreating pad adsorbing SiO2 grains and abrasive-free slurries

Application of surface analysis in study on removal mechanism and abrasive selection during fused silica chemical mechanical polishing

Enhancing Slurry Stability and Surface Flatness of Silicon Wafers through Organic Amine-Catalyzed Synthesis Silica Sol

Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Large-Area Preparation of a Robust Superamphiphobic Coating for Chemical Mechanical Polishing Application

Mechanism Analysis of Megasonic and Brush Cleaning Processes for Silicon Substrate after Chemical Mechanical Polishing

Investigation of Polisher Head and Slurry Sweep Effect in Oxide Film Polishing

Development of core–shell SiO 2 @A-TiO 2 abrasives and novel photocatalytic chemical machinal polishing for atomic surface of fused silica