Abstract:In this paper, 4H-SiC separated absorption charge and multiplication ultraviolet avalanche photodiodes (APDs) with small gain-voltage slope and enhanced fill factor are designed and fabricated. As a special reach-through structure, the absorption layer of the APD is fully depleted at breakdown voltage, which can share a considerable portion of reverse bias. As a result, the sensitivity of electric field within the multiplication layer as a function of overbias is reduced, leading to a small gain slope. Given the fact that the impact ionization coefficient of holes is less sensitive to electric field variation than that of electrons, the APD is also designed to be a hole-initiated ionization type, which can further reduce the gain slope. Meanwhile, three different top-electrode geometric patterns of SiC APDs are designed, and their impact on APD performance is investigated for the first time. Severe current crowding effect is observed in the forward current-voltage (I-V) characteristics of the APD with a traditional dot top-electrode, indicating inefficient current spreading across the top contact layer due to nonnegligible lateral resistance. In contrast, the forward I-V characteristics and photo-current at the avalanche regime of the APDs with optimized branch-shaped top-electrodes are apparently improved, owing to the improvement of electric field distribution and avalanche multiplication uniformity across the device active area. Furthermore, photon count rate increases by two to four times with larger voltage pulse height, suggesting enhanced effective avalanche multiplication area and fill factor.

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Avalanche Mechanism Analysis of 4H-Sic N-I-p and P-I-n Avalanche Photodiodes Working in Geiger Mode

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4H-Sic P-I-n Ultraviolet Avalanche Photodiodes Obtained by Al Implantation

High-performance 4H-SiC EUV Photodiode with Lateral p-n Junction Fabricated by Selective-area Ion Implantation

Study of Gain Spatial Nonuniformity in n-on-p and p-on-n 4H-SiC Avalanche Photodiodes

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High-Responsivity ZnS Schottky Barrier Photodiode Array for Ultraviolet Imaging

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Multiplication and Excess Noise Characteristics of Thin 4H-Sic UV Avalanche Photodiodes

Performance Improvement of 4H-Sic PIN Ultraviolet Avalanche Photodiodes with Different Intrinsic Layer Thicknesses

4H-Sic PIN Recessed-Window Avalanche Photodiode with High Quantum Efficiency

4H-Sic SACM Avalanche Photodiode with Low Breakdown Voltage and High UV Detection Efficiency