Abstract:Mg 3 Sb 2 -based n-type materials are consisted of earth-abundant elements and possess comparable thermoelectric properties with n-type Bi 2 Te 3 at low temperatures, which make them promising candidates for cooling and power generation applications in terms of cost and performance. Substitution of Sb atom with chalcogen elements (Te, Se S) is a conventional method for n-type doping, but doping cations such as rare-earth elements and transition metals is also widely studied for its unique advantages. In this study, La and Mn were selected for co-doping of Mg3SbBi, and the thermoelectric performances of the doped materials were investigated. Mg 3 La 0.005 Mn x SbBi (0  x  0.015) polycrystalline samples were made by sintering the fine powders of the mother alloy after arc melting, in which elemental Mn and LaSb compound were included for n-type dual doping. Considering the loss of Mg at elevated temperatures by vaporization, the molar ratio of Mg, Sb, and Bi in the mixture for arc melting was set to 4 : 1 : 1 with excess Mg. Analysis shows that all the samples are n-type, and the electrical conductivity of Mg 3 La 0.005 Mn 0.015 SbBi increased by 62% from the Mn-free Mg 3 La 0.005 SbBi at 298 K. In addition, the lattice thermal conductivity (  lat ) decreased with increasing Mn content in the measured temperature range of 298-623 K. The minimum value of  lat was about 0.60 W m -1 K -1 in Mg 3 La 0.005 Mn 0.015 SbBi at 523 K, which is about 19% smaller than that of the Mn-free sample. As a result of these enhancements in thermoelectric performance, the maximum figure of merit ( zT max ) of 1.12 was obtained in Mg 3 La 0.005 Mn 0.01 SbBi and Mg 3 La 0.005 Mn 0.015 SbBi at 573 K, and the zT at 298 K increased by 73% to 0.35 in Mg 3 La 0.005 Mn 0.015 SbBi compared to Mn-free Mg 3 La 0.005 SbBi, which is beneficial to room-temperature applications.

Thermoelectric Enhancement Achieved by Y and La Co-doping in N-Type Mg3.2Sb1.5Bi0.5

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Extraordinary thermoelectric performance, thermal stability and mechanical properties of n-type Mg3Sb1.5Bi0.5 through multi-dopants at interstitial site

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Effects of Bi and Sb Doping on the Thermoelectric Performance of N-Type Quaternary Mg2.18Ge0.1Si0.3Sn0.6 Materials

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Extraordinary N-Type Mg3SbBi Thermoelectrics Enabled by Yttrium Doping

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Roles of concentration-dependent Cu doping behaviors on the thermoelectric properties of n-type Mg3Sb1.5Bi0.5

Enhancing the Thermoelectric Performance of P-Type Mg3Sb2 Via Codoping of Li and Cd

Extraordinary Thermoelectric Performance in N-Type Manganese Doped Mg3Sb2 Zintl: High Band Degeneracy, Tuned Carrier Scattering Mechanism and Hierarchical Microstructure

Enhancing the Thermoelectric Performance of n‐Type Mg3Sb2‐Based Materials via Ag Doping

Optimization of Thermoelectric Property of n‐Type Mg3Sb2 Near Room Temperature via Mn&Se Co‐Doping

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Band Engineering and Phonon Engineering Effectively Improve N-Type Mg3Sb2 Thermoelectric Material Properties.

Significant Role of Mg Stoichiometry in Designing High Thermoelectric Performance for Mg3(Sb,Bi)2-Based N-Type Zintls.

Synergistic Effect of Band and Nanostructure Engineering on the Boosted Thermoelectric Performance of n‐Type Mg3+δ(Sb, Bi)2 Zintls

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Enhancement of Thermoelectric Performance of YbMg2Bi2-based Materials by Alloying and Doping with Suppressed Bipolar Effect