Abstract:The group-Ⅲ nitrides and their related ternary alloys have been becoming the most attractive material for light emitting diodes (LEDs) and laser diodes (LDs) in the UV and blue spectral range. However, the origins of the yellow luminescence (YL), which is commonly observed in almost undoped and n-type GaN, remain unclear. The nature and the role of initial nitridation of sapphire surface and the generation of threading dislocation (TD) are ambiguous too. It is a possible way to resolve the above problems by studying the microstructures and optical properties combining the growth conditions. In this work, two kinds of GaN films were grown by MOCVD under different initial nitridation time (180 seconds for Sample A, and 90s for Sample B). The growth temperature is about 950℃. The cross-sectional transmission electron microscope (TEM) is performed near the GaN/sapphire interface. Corresponding the growth processes, there are three zones in the GaN layer: buffer layer, zone and sound zone. There are haystack-like domains in the faulted zone, in which there are high density of extended defects. The thickness of the faulted zone is about 0.4μm. Just above this region, the defects density is reduced sharply, and the quality of the layer is improved, which is identified by electron diffraction (ED) patterns. In comparison, Sample A shows about an order lower density of extended defects than Sample B, their columnar diameter is larger and its ED pattern is sharper, too. The buffer layer of Sample B is more smooth than Sample A. The appropriate rougher morphology of the buffer layer may cause that the structural disorder between the high-temperature (HT) grown island and the buffer layer is accommodated by Frank and Shockley partial dislocations. However, the TD is likely to propagate into the HT GaN from the smooth surface of the buffer layer grown after extensively nitridation of substrate. According to the position and width of X-ray diffraction peaks of (0002) and (0004), the size of crystalline grain, D and the residual strain could be calculated. The values of(D,e in)of Sample A and B are (175nm,0.167%) and (90nm,0.141%), respectively. Small size of crystalline grain may be advantageous to relieve the lattice and thermal mismatch stress, but it lead to higher density of extended defects. The width of GaN (0002) reflections of Sample A is 4min lower than that of Sample B. This result may be due to the lower screw TD. The higher density of screw TD may widen the GaN (0002) peak in X-ray rocking curve. In room temperature PL spectra, the ratio of band-edge emission intensity to YL one of Sample A is 3 orders larger than that of Sample B. Furthermore the YL in Sample B is stronger and has fine structure, while that in Sample A is nearly invisible in the PL spectrum. The GaN epilayer with high quality exhibits almost no YL emission. It is well known that the YL corresponds to the deformed crystal structure. We assigned that the screw TD and mixed TD are attributed to the YL referring to our XRD results.

The Influence of High-Temperature Nitridation Process on the Crystalline Quality of Semipolar (112‾2) GaN Epitaxial Films

Improvement of (11\bar{2}2) Semipolar GaN Crystal Quality with TiN Interlayer by Metal Organic Vapor Phase Epitaxy

N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation

Influences of nitridation treatment on the properties of semi-polar (11 2 ̅2) plane AlGaN films

Growth of High-Quality Nitrogen-Polar GaN Film by Two-Step High-Temperature Method

Improvement of (112̄2) semipolar gan crystal quality with tin interlayer by metal organic vapor phase epitaxy

The Effects of Substrate Nitridation on the Growth of Nonpolar A-Plane GaN on R-Plane Sapphire by Metalorganic Chemical Vapor Deposition

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Effect of SiO2(1.2 Μm)/ti-Foil Substrate Nitridation on GaN Thin Films Grown by Reactive Evaporation Method

Microstructural and Optical Properties of GaN Films on Nitrided Sapphire Substrates

Improvement in a -Plane GaN Crystalline Quality Using Wet Etching Method

Influence of the Growth Temperature of AlN Buffer on the Quality and Stress of GaN Films Grown on 6h–sic Substrate by MOVPE

Enhancement of optical property and crystal structure for GaN films on 2D MoS2 buffer layer by nitridation treatment

Crystalline Orientation and Anisotropy of Semi-Polar Gan Films Grown on M-Sapphire Substrate by Hydride Vapor Phase Epitaxy

Influences of SiNx Interlayer on the Crystalline Quality and the Surface Morphology of GaN Epitaxial Films

Effects of AlN substrate orientation on crystalline quality of wurtzite GaN films investigated via molecular dynamics

Improved Crystal Quality of Nonpolar A-Plane GaN Based on the Nano Pattern Formed by the Annealed Thin Ni Layer

The Impact of Nanoporous SiN X Interlayer Growth Position on High-Quality GaN Epitaxial Films

The Effects of Sapphire Nitridation on GaN Growth by Metalorganic Chemical Vapour Deposition