Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.

Single Event Induced Crosstalk of Monolithic 3D Circuits Based on a 22 nm FD-SOI Technology

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Novel LC resonant clocking for 3D IC using TSV-inductor and capacitor

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Crosstalk Reduction in TSV Arrays with Direct Ohmic Contact Between Metal and Silicon-Substrate

3DCAM: A Low Overhead Crosstalk Avoidance Mechanism for TSV-Based 3D ICs

FDSOI Process Based MIV-transistor Utilization for Standard Cell Designs in Monolithic 3D Integration

Analysis and Suppression for Crosstalk in SiC MOSFET Turn-off Transient

Cancellation of Power-Gate Mutual Inductance for Crosstalk Voltage Alleviation in SiC MOSFET Multi-chip Power Modules

Crosstalk Suppression in Monolithic GaN Devices Based on Inverted E -Field Decoupling

Design-Technology Co-Optimization for Stacked Nanosheet Oxide Channel Transistors in Monolithic 3D Integrated Circuit Design

Mono3D: Open Source Cell Library for Monolithic 3-D Integrated Circuits.

A Shielding Structure for Crosstalk Reduction in Silicon Interposer

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

III-V/Ge MOS Device Technologies for Low Power Integrated Systems

Mono 3 D to Develop Large-Scale Monolithic 3 D Integrated Circuits

(Invited) III-V/Ge CMOS Device Technologies for High Performance Logic Applications

Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors

Heavy ion track straggling effect in single event effect numerical simulation of 3D stacked devices

Fast time domain crosstalk analysis of through silicon vias based on equivalent circuit model

SiC MOSFET Crosstalk Modelling with Suppression Considering Impacts of Dv/dt and Di/dt