Abstract:Due to the extremely fast switching speed of the SiC MOSFET, its crosstalk issue is more serious than that of the Si IGBT. Therefore, in order to ensure the reliability of the SiC MOSFET converters, the crosstalk problem must be solved firstly. Most of the existing crosstalk suppression methods are aimed at decreasing the crosstalk voltage introduced by the parasitic gate-drain capacitance (Miller capacitance), ignoring the influence of other parasitic parameters on the crosstalk voltage, such as the common source inductance, which may also lead to more serious reliability problems. Thus, this paper firstly establishes the mathematical model of the switching process of the SiC MOSFET half-bridge inverter. Then, the effects of various parasitic parameters (the gate-source capacitance, the gate-drain capacitance, the common source inductance, the gate inductance, the drain inductance) on the crosstalk voltage are analyzed and modeled in detail, which is verified by experiments. Based on the analyses and models, a novel crosstalk voltage suppression circuit is proposed, which can not only suppress the crosstalk caused by the gate-drain capacitance, but also solve the crosstalk issue considering the influence of other parasitic parameters, such as the common source inductance. Finally, a double pulse test platform is established to verify the effectiveness of the designed crosstalk suppression circuit under different voltage/current conditions.

Cancellation of Power-Gate Mutual Inductance for Crosstalk Voltage Alleviation in SiC MOSFET Multi-chip Power Modules

Design of Low Parasitic Inductance SiC MOSFETs Halfbridge Power Modules

Analysis and Suppression for Crosstalk in SiC MOSFET Turn-off Transient

Suppression Switching Ringing of SiC-MOSFET Inverters with Combined Design of DC Bus Snubber and Gate Drive

Design of Active SiC MOSFET Gate Driver for Crosstalk Suppression Considering Impedance Coordination between Gate Loop and Power Loop

High Off-State Impedance Gate Driver of SiC MOSFETs for Crosstalk Voltage Elimination Considering Common-Source Inductance

Innovative Reverse Current Coupling Layout of SiC Power Module for Parasitic Inductance Reduction

An Adjacent Miller Clamp Circuit for Crosstalk Suppression in SiC MOSFETs

Analysis of A Low-Inductance Packaging Layout for Full-Sic Power Module Embedding Split Damping

Analysis for Crosstalk of SiC-MOSFET in a Bridge Circuit and Its Active-Clamped Driver Based Suppression Methods

Modeling and Suppression of the Crosstalk Issue Considering the Influence of the Parasitic Parameters of SiC MOSFETs

A Multi-level Self-Driving Gate Driver of SiC MOSFET for Crosstalk Suppression Considering Common-Source Inductance

Suppressing Methods of Parasitic Capacitance Caused Interference in a SiC MOSFET Integrated Power Module

SiC MOSFET Crosstalk Modelling with Suppression Considering Impacts of dv/dt and di/dt

Analysis and Mitigation on Mismatch-induced Spurious Gate-source Voltages in SiC Bridge-leg Power Modules with Kelvin Sources

Dynamic Current Balancing for Paralleled SiC MOSFETs with Circuit Mismatches Considering Circulating C Urrent in Drive Circuit

An Improved Active Crosstalk Suppression Method for High-Speed SiC MOSFETs

A Novel SiC MOSFET Module for High-power Soft-switching Converter

Suppression on Crosstalk Voltages of Paralleled SiC MOSFETs with Optimized Gate Configurations and Additional SiC SBDs

Simultaneous Mitigation of Switching Overvoltage and Oscillation for SiC MOSFET via Gate Charge Injection Concept