Abstract:A self-referenced temperature sensor with a time-domain readout and a two-step improvement on output dynamic range is presented in this paper. The proposed temperature sensor utilizes BJTs to generate temperature dependent/independent currents, which are converted to digital bits using a ring-oscillator-based time-domain readout scheme. A novel two-step improvement on output dynamic range is proposed to improve the power-efficiency and simplify the hardware design with a high conversion rate. Furthermore, the adopted process compensation strategy and the self-referenced readout scheme make the whole temperature sensor robust to process and supply variations. Fabricated in a standard 0.13-mu m CMOS process, the proposed temperature sensor occupies a die area of 0.06 mm(2) and consumes 9.92 nJ per conversion at a conversion rate of 75 kSa/s. After one-point calibration at 20 degrees C, the sensor achieves inaccuracies of -2.88 degrees C/+2.71 degrees C and -1.7 degrees C/1.36 degrees C from -20 degrees C to 100 degrees C, with and without systematic nonlinearity removal, respectively. It shows an average supply sensitivity of 0.0136 degrees C/mV from 1.05 V to 1.4 V without any external reference clock or voltage regulators.

A BJT-Based CMOS Temperature Sensor Achieving an Inaccuracy of $\pm 0.45{{}^{\circ}\mathsf{C}}(3\sigma)$ from °50°C to 180°C and a Resolution-FoM of 7.2pJ.K 2 at 150°C

A BJT-based SAR Temperature Sensor with a 5.12 pJ.K-2 Resolution FoM from-40 degrees C to 125 degrees C

A BJT-based SAR Temperature Sensor with a $5.12\ \text{pJ}\cdot \mathrm{K}^{2}$ Resolution FoM from -40 °C to 125 °C.

A BJT-based SAR Temperature Sensor with a $5.12\ \text{pj}\cdot \mathrm{k}^{2}$ Resolution FoM from −40 °C to 125 °C

An All-Digital CMOS Temperature Sensor with a Wide Supply Voltage Range.

A BJT-Based CMOS Temperature Sensor with Duty-Cycle-Modulated Output and ±0.5°C (3σ) Inaccuracy from −40 °C to 125 °C

An Inaccuracy of +/- 0.5 degrees C Digital Temperature Sensor From-40 degrees C to 125 degrees C With Curvature Correction

A 0.8V Capacitively-Biased BJT-Based Temperature Sensor with an Inaccuracy of ±0.4°C ($\mathbf{3}\mathbf{\sigma}$) from −40°C to 125°C in 22nm CMOS

An Energy-Efficient BJT-Based Temperature Sensor with +/- 0.8 degrees C (3 sigma) Inaccuracy from-50 to 150 degrees C

A BJT-Based Fully Integrated 16-Bit ZOOM Temperature Sensor with an Inaccuracy of 0.28°C (3σ) from -40°C to 125°C Using Improved 1-Point Calibration

An Untrimmed BJT-Based Temperature Sensor with Dynamic Current-Gain Compensation in 55-Nm CMOS Process

A CMOS Temperature Sensor with Versatile Readout Scheme and High Accuracy for Multi-Sensor Systems

A Dynamic-Biased Resistor-Based CMOS Temperature Sensor with a Duty-Cycle-Modulated Output

A 0.26-Pj·k2 2400-Μm2 Digital Temperature Sensor in 55-Nm CMOS

Capacitor-Reused Cmos Temperature Sensor With Duty-Cycle-Modulated Output And 0.38 Degrees C (3 Sigma) Inaccuracy

A 1-V Diode-Based Temperature Sensor with a Resolution FoM of 3.1pj•k2 in 55nm CMOS

A 1.2V Self-Referenced Temperature Sensor with a Time-Domain Readout and a Two-Step Improvement on Output Dynamic Range

Capacitor-reused CMOS temperature sensor with duty-cycle-modulated output and 0.38°C ( 3 σ ) inaccuracy

CMOS Digital Temperature Sensor with Self-Correcting Technique

A 13-Bit Temperature Sensor with a ±1.45°C (3σ) Inaccuracy from -55°C to 125°C

An Energy-Efficient BJT-Based Temperature Sensor with ±0.8 °C (3 σ) Inaccuracy from -50 to 150 °C