Fabrication and optimization of aggressively scaled Dual-Bit/Cell Split-Gate Floating-Gate flash memory cell in 55-nm node technology

Hualun Chen,Zhaozhao Xu,Wei Xiong,Jian Zhang,Xiaojun Xu,Hui Wang,Yang Dang,Jinfeng Wang,Wan Song,Tian Tian,Donghua Liu,Wensheng Qian,Weiran Kong

DOI: https://doi.org/10.1016/j.sse.2022.108316

2022-01-01

SSRN Electronic Journal

Abstract:An aggressively scaled triple self-aligned split-gate floating-gate (FG) NOR-type Dual-bit/cell (NORD) flash cell was studied and fabricated at 55-nm node technology. Both FG-and selected-gate (SG-) length, for the first time, were scaled down to sub-80 nm and sub-60 nm in NORD flash, respectively. In this paper, performance of aggressively scaled cells were demonstrated by measurements. Firstly, the cell's characteristics were presented by discussing FG-and SG-transistor's drain-induced barrier lowering (DIBL) effects and SG-FG coupling effect. It was experimentally revealed that excellent immunity of DIBL effect was still obtained in this highly scaled SG transistor due to the fully isolated SG-channel. Then, optimization from process for FG-transistor had been discussed. It was shown that the properties of subthreshold region of FG-transistor has been improved by introducing dual pocket implants for the half-isolated FG-channel. Thirdly, reading biases were also studied to expand the window of read currents. A novel cell structure was also proposed to further improve the aggressively length-scaled NORD flash cell without sacrificing bit-area. Finally, the reliability characteristics were also presented.

What problem does this paper attempt to address?

Fabrication and optimization of aggressively scaled Dual-Bit/Cell Split-Gate Floating-Gate flash memory cell in 55-nm node technology

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