Abstract:High-density embedded nonvolatile memory (eNVM) at advanced technology nodes is still in great demand for SOC chips used in consumer electronics, self-driving cars, industrial control, and IoT edge devices. Although embedded NOR Flash is still main stream, its process complexity and high integration cost make it difficult to scale beyond 28nm. RRAM has become a promising alternative owing to its excellent scalability, low power, and compatibility with logic processes [1 –6]. However, several challenges still exist that restrict RRAM from practical eNVM applications, as shown in Fig. 24.2.1. 1) a high supply voltage is needed, because of high operation voltages and a considerable voltage drop on write path. 2) The IR drop on write path varies significantly with the distance of a cell from the peripheral circuits. 3) Prior self-write termination (SWT), with its abrupt cutoff, fails to form dense conductive filaments (CFs). While delayed termination helps to alleviate this issue, its delay time is not optimized for fast and slow cells [3]. 4) Previous read reference schemes that use a small number of HRS/LRS cells may collapse when encountering tail bits, resulting in a poor reference [6]. In this work, we demonstrate a 1Mb 14nm-FinFET RRAM with a $0.022 \\mu m^{2}$ cell size. The cell array is in a deep N-well with adequate P-substrate biasing to alleviate the difficulty of high voltage transfer. Placing the bit line (BL) and source line (SL) drivers on the top and bottom of the array reduces the IR-drop variation for near and far cells. Self-adaptive delayed termination (SADT) adjusts the termination time according to cell characteristics (fast or slow), helping to generate robust CFs. A read reference with multiple dummy 1T1R cells avoids the reference collapse issue. The test chip supports reliable read operation at a minimum supply voltage of 0.5V from $-40^{\\circ}C$ to $125^{\\circ}C$.

A 1G-Cell Floating-Gate NOR Flash Memory in 65 Nm Technology with 100 Ns Random Access Time.

A 65-Nm 1-Gb nor Floating-Gate Flash Memory with Less Than 50-Ns Access Time

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

A 280-Kbytes Twin-Bit-Cell Embedded NOR Flash Memory with a Novel Sensing Current Protection Enhanced Technique and High-Voltage Generating Systems

Erratum: “A Novel Body-Tied Fin Field Effect Transistor Flash Memory Structure with Λ-Shaped Floating Gate for Sub 45 Nm NOR Flash Memory”

A Novel 3D NOR Flash with Single-Crystal Silicon Channel: Devices, Integration, and Architecture

A Novel Non-Planar Cell Structure for Flash Memory

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications

A 14nm-Finfet 1mb Embedded 1t1r Rram With A 0.022 Mu M(2) Cell Size Using Self-Adaptive Delayed Termination And Multi-Cell Reference

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode.

24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µm<sup>2</sup> Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference

A Novel Structure for Beyond-45 Nm nor Flash Technology Featuring Short Channel Effect Immunity and Low Random Telegraph Signal Noise

Redesigning Commercial Floating-Gate Memory for Analog Computing Applications

Design-Technology Co-Optimizations (DTCO) for General-Purpose Computing In-Memory Based on 55nm NOR Flash Technology

Novel p-Channel Selected n-Channel Divided Bit-Line NOR Flash Memory Using Source Induced Band-to-Band Hot Electron Injection Programming

Design and Realization of a 0.13 Μm 1 Mb Resistive Random Access Memory

A Novel Dual-Doping Floating-Gate (ddfg) Flash Memory Featuring Low Power and High Reliability Application

A 1.35-V 16-Mb Twin-Bit-Cell Virtual-Ground-Architecture Embedded Flash Memory with A Sensing Current Protection Technique

Study for NOR Flash Cell Burn out Failure Improvement in the Advanced Node below 65Nm

An Advanced Tunnel Oxide Layer Process for 65 Nm NOR Floating-Gate Flash Memories