Abstract:As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. However, its commercial production size is currently 6 inches, and the difficulty in preparing larger single crystals increases exponentially with size increasing. Large-size single crystal growth is faced with the enormous problem of radial growth conditions deteriorating. Based on simulation tools, the physical field of 8-inch crystal growth is modeled and studied. By introducing the design of the seed cavity, the radial temperature difference in the seed crystal surface is reduced by 88% from 93 K of a basic scheme to 11 K, and the thermal field conditions with uniform radial temperature and moderate temperature gradient are obtained. Meanwhile, the effects of different processing conditions and relative positions of key structures on the surface temperature and axial temperature gradients of the seed crystals are analyzed in terms of new thermal field design, including induction power, frequency, diameter and height of coils, the distance between raw materials and the seed crystal. Meanwhiles, better process conditions and relative positions under experimental conditions are obtained. Based on the optimized conditions, the thermal field verification under seedless conditions is carried out, discovering that the single crystal deposition rate is 90% of that of polycrystalline deposition under the experimental conditions. Meanwhile, an 8-inch polycrystalline with 9.6 mm uniform deposition was successfully obtained after 120 h crystal growth, whose convexity is reduced from 13 mm to 6.4 mm compared with the original scheme. The results indicate that the optimized conditions can be used for single-crystal growth.

Thermo-Solutal Issues in Very Large Diameter Silicon Crystal Growth

Diameter-Controlled Czochralski Growth of Silicon Crystals

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Designed Growth of Large‐Size 2D Single Crystals

Technology and Thermomechanics in Growing Tubular Silicon Single Crystals

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Effect of Crystal Rotation on Melt Convection and Resistivity Distribution in 200 mm Floating Zone Silicon Single Crystal Growth

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

3D Numerical Investigation and Improvement to the Design of the Thermal Field Before Seeding in a Multi-Die Edge-Defined Film-Fed Growth System for Sapphire Ribbon Crystals

Large-eddy simulation of melt turbulence in a 300-mm Cz-Si crystal growth

Effects of Induced Current in Crystals on the Melt Flow and the Melt–Crystal Interface during Industrial 300 mm Czochralski Silicon Crystal Growth under a Transverse Magnetic Field

Turbulent transport of oxygen in the Czochralski growth of large silicon crystals

Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field

Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method

Thermal Field Design of a Large-Sized SiC Using the Resistance Heating PVT Method Via Simulations

Influence of Crystal Growth Rate on the Thermal Field in a Directional Solidification Process for Silicon Solar Cells

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

Temperature Field Design, Process Analysis and Control of SAPMAC Method for the Growth of Large Size Sapphire Crystals

Germanium doping for improved silicon substrates and devices

Numerical Analysis of Solid–liquid Interface Shape During Large-Size Single Crystalline Silicon with Czochralski Method

Numerical Investigation of the Effect of Rotation on the Oscillatory Thermocapillary Convection and Dopant Transport in a Silicon Liquid Bridge