Enhancing Hole Density and Suppressing Recombination Centersthrough Illumination in Kesterite Thin Film Solar Cells

Ji-Hui Yang
DOI: https://doi.org/10.1021/acs.jpclett.2c00502
2022-01-01
Abstract:Enhancing carrier density and increasing carrier lifetime are critical for the goodperformance of thinfilm solar cells. We apply illumination during the growth of kesteriteCu2ZnSnS4(CZTS) to enhance hole density and suppress defects of nonradiative electron-hole recombination centers simultaneously. To examine the effect of the injected carriersgenerated by illumination, wefirst extend the scheme of detailed balance equations relating freecarriers and defects beyond thermal equilibrium conditions by developing an extended Fermilevel (EF ') to characterize a homogeneous semiconductor with non-equilibrium carriers. On thebasis of this scheme, wefind that illumination can promote the formation of carrier-providingdefects and suppress the formation of carrier-compensating defects. Then, we demonstrate thatapplying proper illumination during the growth of CZTS will help achieve a higher hole densityand simultaneously suppress the formation of the SnZnantisite significantly, which arebeneficial for the performance of CZTS solar cells.
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