Abstract:Increasing the power conversion efficiency (PCE) of kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells has remained challenging over the past decade, in part due to open-circuit voltage (VOC)-limiting defect states at the absorber/buffer interface. Previously, we found that substituting the conventional CdS buffer layer with In2S3 in CZTSSe devices fabricated from nanoparticle inks produced an increase in the apparent doping density of the CZTSSe film and a higher built-in voltage arising from a more favorable energy-band alignment at the absorber/buffer interface. However, any associated gain in VOC was negated by the introduction of photoactive defects at the interface. This present study incorporates a hybrid Cd/In dual buffer in CZTSSe devices that demonstrate an average relative increase of 11.5% in PCE compared to CZTSSe devices with a standard CdS buffer. Current density-voltage analysis using a double-diode model revealed the presence of (i) a large recombination current in the quasi-neutral region (QNR) of the CZTSSe absorber in the standard CdS-based device, (ii) a large recombination current in the space-charge region (SCR) of the hybrid buffer CZTSSe-In2S3-CdS device, and (iii) reduced recombination currents in both the QNR and SCR of the CZTSSe-CdS-In2S3 device. This accounts for a notable 9.0% average increase in the short-circuit current density (JSC) observed in CZTSSe-CdS-In2S3 in comparison to the CdS-only CZTSSe solar cells. Energy-dispersive X-ray, secondary-ion mass spectroscopy, and grazing-incidence X-ray diffraction compositional analysis of the CZTSSe layer in the three types of kesterite solar cells suggest that there is diffusion of elemental In and Cd into the absorbers with a hybrid buffer. Enhanced Cd diffusion concomitant with a double postdeposition heat treatment of the hybrid buffer layers in the CZTSSe-CdS-In2S3 device increases carrier collection and extraction and boosts JSC. This is evidenced by electron-beam-induced current measurements, where higher current generation and collection near to the p-n junction is observed, accounting for the increase in JSC in this device. It is expected that optimization of the heat treatment of the hybrid buffer layers will lead to further improvements in the device performance.

Achieving high open-circuit voltage in efficient kesterite solar cells via lanthanide europium ion induced carrier lifetime enhancement

Modulating Hot Carrier Cooling and Extraction with A-site Organic Cations in Perovskites.

Constructing Ultra-Shallow Near-Edge States for Efficient and Stable Perovskite Solar Cells

The enhancement of CZTSSe solar cell performance through active construction of the double-layer absorber

Unveiling microscopic carrier loss mechanisms in 12% efficient Cu 2 ZnSnSe 4 solar cells

Multinary alloying for facilitated cation exchange and suppressed defect formation in kesterite solar cells with above 14% certified efficiency

Enhanced Carrier Collection in Cd/In-Based Dual Buffers in Kesterite Thin-Film Solar Cells from Nanoparticle Inks

High Efficiency Cu2ZnSn(S,Se)4 Solar Cells with Shallow LiZn Acceptor Defects Enabled by Solution‐Based Li Post‐Deposition Treatment

High Efficiency Cu 2 ZnSn(S,Se) 4 Solar Cells with Shallow Li Zn Acceptor Defects Enabled by Solution‐Based Li Post‐Deposition Treatment

Enhancing Hole Density and Suppressing Recombination Centers Through Illumination in Kesterite Thin Film Solar Cells.

Passivating Grain Boundaries via Graphene Additive for Efficient Kesterite Solar Cells

Highly efficient, ultrathin, Cd-free kesterite solar cells in superstrate configuration enabled by band level tuning via Ag incorporation

Defect Control for 12.5% Efficiency Cu2 ZnSnSe4 Kesterite Thin-Film Solar Cells by Engineering of Local Chemical Environment

Suppressing Element Inhomogeneity Enables 14.9% Efficiency CZTSSe Solar Cells

Achieving 11.23 % Efficiency in CZTSSe Solar Cells Via Defect Control and Interface Contact Optimization

Defect Control for 12.5% Efficiency Cu2ZnSnSe4 Kesterite Thin-Film Solar Cells by Engineering of Local Chemical Environment

Unveiling the Effect of CZTSSe Quantum Superlattice on the Interfacial and Optical Properties of CZTS Kesterite Solar Cell

Toward High Efficient Cu2 ZnSn(Sx ,Se1- x )4 Solar Cells: Break the Limitations of VOC and FF

Ag Incorporation with Controlled Grain Growth Enables 12.5% Efficient Kesterite Solar Cell with Open Circuit Voltage Reached 64.2% Shockley–Queisser Limit

An ITO‐Free Kesterite Solar Cell

Li, Ag Co‐Doping Enables Efficient Kesterite Solar Cell with a High Fill Factor of 74.30%