Doping in the Two-Dimensional Limit: P/n-Type Defects in Monolayer ZnO

Dong Han,Xian-Bin Li,Dan Wang,Nian-Ke Chen,Xi-Wu Fan

DOI: https://doi.org/10.1103/physrevb.105.024104

IF: 3.7

2022-01-01

Physical Review B

Abstract:The thickness limit is utilized to investigate the doping physics in ZnO, i.e., monolayer (ML) ZnO. First-principles study demonstrates that the p/n-type defects in ML ZnO still have doping asymmetry. Among the doping defect models widely studied in bulk ZnO, Li-Zn and Ga-Zn with ionization energies of 0.86 and 0.82 eV are the optimal p- and n-type doping defects in ML ZnO, respectively. Their ionization energies are comparable with those of relatively shallow defects in other ML semiconductors. However, the Li-Zn acceptor faces a severe issue in that Li-Zn is the metastable structure and will transform into the most stable Jahn-Teller-distorted structure (Li-Zn(JT)) with increasing its ionization energy to 1.53 eV. Furthermore, our scanning tunneling microscopy simulations show even a little structural distortion of the doping defects can be easily detected with the appropriate positive bias voltage on a sample of ML ZnO. The present study reveals the p/n-type defects' properties in ML ZnO and offers a way to understand and directly identify defect behaviors in wide-band-gap semiconductors in their two-dimensional limit form.