16×16 Non-Blocking Silicon Thermo-Optic Switch with a Benes Architecture

Linjie Zhou,Liangjun Lu,Shuoyi Zhao,Zuxiang Li,Dong Li,Jianping Chen

DOI: https://doi.org/10.1364/acpc.2015.as4a.3

2015-01-01

Abstract:We demonstrate a 16×16 silicon optical switch consisting of 56 thermo-optic MZI switches in a Benes architecture. The chip size is 7×3.6 mm2. The on-chip insertion loss is <5 dB and the crosstalk is <−20 dB.

What problem does this paper attempt to address?

16×16 Non-blocking silicon electro-optic switch based on Mach-Zehnder interferometers

Lei Qiao,Weijie Tang,T. Chu

DOI: https://doi.org/10.1364/OFC.2016.TH1C.2

2016-03-20

Abstract:A non-blocking 16×16 silicon electro-optic switch based on Benes network was demonstrated. The extinction ratios of the switch are 20.2~29.8 dB. It consists of 56 MZI switch units, whose switching time are 1 nanosecond.

Computer Science,Physics,Engineering
16 × 16 Silicon Optical Switch Based on Dual-Ring-Assisted Mach–Zehnder Interferometers

Jianping Chen,Z. Guo,Liangjun Lu,Linjie Zhou,Lin Shen

DOI: https://doi.org/10.1109/JLT.2017.2751562

IF: 4.7

2018-01-15

Journal of Lightwave Technology

Abstract:In this paper, we report a nanosecond 16 × 16 silicon electro-optic switch chip based on a Benes architecture. The switch adopts dual-ring-assisted Mach–Zehnder interferometers as the basic building blocks. In each switch element, both TiN microheaters and PIN diodes are integrated for ring resonance alignment and high-speed switching, respectively. A transfer-matrix-based theoretical model is established to analyze the switch performances. The 16 × 16 switch is characterized by measuring the optical transmission spectra and quadrature phase-shift keying (QPSK) data transmission through 16 representative optical paths. The insertion loss of the entire switch chip is 10.6 ± 1.7 dB and the crosstalk is less than −20.5 dB. The 32-Gb/s QPSK signal is successfully switched to different destination ports by reconfiguring the optical paths, verifying the signal integrity after switching.

Physics,Engineering
16 × 16 Non-Blocking Silicon Optical Switch Based on Electro-Optic Mach-Zehnder Interferometers.

Liangjun Lu,Shuoyi Zhao,Linjie Zhou,Dong Li,Zuxiang Li,Minjuan Wang,Xinwan Li,Jianping Chen

DOI: https://doi.org/10.1364/oe.24.009295

IF: 3.8

2016-01-01

Optics Express

Abstract:We experimentally demonstrate a 16 × 16 non-blocking optical switch fabric with a footprint of 10.7 × 4.4 mm2. The switch fabric is composed of 56 2 × 2 silicon Mach-Zehnder interferometers (MZIs), with each integrated with a pair of TiN resistive micro-heaters and a p-i-n diode. The average on-chip insertion loss at 1560 nm wavelength is ~6.7 dB and ~14 dB for the "all-cross" and "all-bar" states, respectively, with a loss variation of ± 1 dB over all routing paths. The measured rise/fall time of the switch upon electrical tuning is 3.2/2.5 ns. The switching functionality is verified by transmission of 20 Gb/s on-off keying (OOK) and 50 Gb/s quadrature phase-shift keying (QPSK) optical signals.
16 X 16 Silicon Mach-Zehnder Interferometer Switch Actuated With Waveguide Microheaters

Shuoyi Zhao,Liangjun Lu,Linjie Zhou,Dong Li,Zhanzhi Guo,Jianping Chen

DOI: https://doi.org/10.1364/PRJ.4.000202

IF: 7.6

2016-01-01

Photonics Research

Abstract:We experimentally demonstrate a 16 x 16 reconfigurably nonblocking optical switch fabric using a Benes architecture. The switch fabric consists of 56 2 x 2 Mach-Zehnder interferometer based elementary switches, with each integrated with a pair of waveguide microheaters. The average on-chip insertion loss is similar to 5.2 dB for both of the "all-cross" and the "all-bar" states, with a loss variation of 1 dB over all routing paths. The cross talk for all switching states is better than -30 dB. The switching time of the switch element is about 22 mu s. The switching functionality is verified by transmission of a 40 Gb/s quadrature phase-shift keying optical signal. (C) 2016 Chinese Laser Press
Scalable Nonblocking &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$4\times4$ &Lt;/tex-Math> &Lt;/inline-Formula> Silicon Optical Switch Based on Dual-Microring Resonators

Xiaoqing Guo,Gencheng Wang,Tingge Dai,Bei Chen,Yuehai Wang,Hui Yu,Zhenhui Li,Jianyi Yang

DOI: https://doi.org/10.1109/lpt.2019.2896439

IF: 2.6

2019-01-01

IEEE Photonics Technology Letters

Abstract:We demonstrate a reconfigurable 4 × 4 silicon optical switch network by using an architecture of Half-Crossbar. It has the advantage of flexible scalability and utilizes fewer elements. The proposed switch is composed of six dual-microring resonators tuned by the thermo-optic effect. The footprint is only 176 μm × 632 μm. At the wavelength of 1557 nm, the average insertion loss is smaller than 2.5 dB according to the results of all 24 switching states. Its rising response time is about 4.9 μs. The experiment verified the optical data transmission ability of the proposed switch network.
Non-blocking 8×8 Silicon Electro-Optic Switch

Lei Qiao,Weijie Tang,Tao Chu

DOI: https://doi.org/10.1109/cleopr.2015.7375918

2015-01-01

Abstract:A re-arrangeable non-blocking 8×8 silicon electro-optic switch was demonstrated. It had extinction ratios of 18.3~25.5dB on all "Cross" status and 13.3~19dB on all "Bar" status at 1550nm.
Fast, High-radix Silicon Photonic Switches.

Tao Chu,Lei Qiao,Weijie Tang,Defeng Guo,Weike Wu

DOI: https://doi.org/10.1364/ofc.2018.th1j.4

2018-01-01

Abstract:With a limited number of built-in power monitors to detect the optimum operating points of all switch units, we demonstrated a 32 × 32 MZI-based silicon electro-optical switch operating with nanosecond speeds.
4 × 4 Nonblocking Silicon Thermo-Optic Switches Based on Multimode Interferometers

liangjun lu,linjie zhou,shulin li,zuxiang li,xinwan li,jianping chen

DOI: https://doi.org/10.1109/JLT.2014.2376933

2015-01-01

Abstract:We experimentally demonstrate a silicon 4 × 4 nonblocking thermo-optic (TO) switch using a generalized Mach-Zehnder interferometer constructed on multimode interferometers. All the 24 switching states for nonblocking switching are characterized. The device fabricated using CMOS technologies has a footprint of 2.8 × 0.65 mm2. The measured average on-chip insertion loss is 9 ± 2 dB and the crosstalk for all switching states is better than -12 dB. The average TO switching power consumption is 109 mW. The switching functionality is verified by transmission of a 40-Gb/s quadrature phase-shift keying optical signal.
Silicon Non-blocking 4×4 Optical Switch Chip Integrated With Both Thermal and Electro-optic Tuners

Liangjun Lu,Xiaorui Li,Wei Gao,Xin Li,Linjie Zhou,Jianping Chen

DOI: https://doi.org/10.1109/jphot.2019.2941960

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:We experimentally demonstrate an integrated strictly non-blocking silicon 4 × 4 optical switch chip that can be operated in both thermo-optic (TO) and electro-optic (EO) switching modes. It is based on the double-layer network (DLN) architecture and consists of twelve 2 × 2 Mach-Zehnder interferometer (MZI) switch elements. TO phase shifters based on TiN microheaters and EO phase shifters based on...
32 × 32 Silicon Electro-Optic Switch with Built-in Monitors and Balanced-Status Units.

Lei Qiao,Weijie Tang,Tao Chu

DOI: https://doi.org/10.1038/srep42306

IF: 4.6

2017-01-01

Scientific Reports

Abstract:To construct large-scale silicon electro-optical switches for optical interconnections, we developed a method using a limited number of power monitors inserted at certain positions to detect and determine the optimum operating points of all switch units to eliminate non-uniform effects arising from fabrication errors. We also introduced an optical phase bias to one phase-shifter arm of a Mach–Zehnder interferometer (MZI)-type switch unit to balance the two operation statuses of a silicon electro-optical switch during push–pull operation. With these methods, a 32 × 32 MZI-based silicon electro-optical switch was successfully fabricated with 180-nm complementary metal–oxide–semiconductor (CMOS) process technology, which is the largest scale silicon electro-optical switch to the best of our knowledge. At a wavelength of 1520 nm, the on-chip insertion losses were 12.9 to 16.5 dB, and the crosstalk ranged from −17.9 to −24.8 dB when all units were set to the ‘Cross’ status. The losses were 14.4 to 18.5 dB, and the crosstalk ranged from −15.1 to −19.0 dB when all units were in the ‘Bar’ status. The total power consumptions of the 32 × 32 switch were 247.4 and 542.3 mW when all units were set to the ‘Cross’ and ‘Bar’ statuses, respectively.
High-speed 8&#x00d7;8 Electro-Optic Switch Matrix Based on Silicon PIN Structure Waveguides

Tao Chu,Lei Qiao,Weijie Tang

DOI: https://doi.org/10.1109/group4.2015.7305981

2015-01-01

Abstract:A high-speed non-blocking silicon 8×8 switch matrix was demonstrated based on Benes network and carrier-dispersion electro-optic controlling. The extinction ratios are 18.3~25.5dB on “all-Cross” and 13.3~19.0dB on “all-Bar” status at 1550nm.
Silicon Large-Scale Optical Switches Using MZIs and Dual-Ring Assisted MZIs

Linjie Zhou,Liangjun Lu,Zuxiang Li,Shuoyi Zhao,Dong Li,Jianping Chen

DOI: https://doi.org/10.1117/12.2218231

2016-01-01

Abstract:We report our recent progress on high-throughput 16x16 silicon non-blocking optical switches based on Mach-Zehnder interferometers (MZIs) and dual-ring assisted MZIs (DR-MZIs). TiN microheaters and p-i-n diodes are both integrated in each switch element for thermo-optic phase error correction and GHz-speed electro-optic switching, respectively. The MZI switch exhibits a broad optical bandwidth and low crosstalk. The DR-MZI switch exhibits low electrical switching power but with a narrower optical bandwidth. The two types of switches are designed to have a chip size of 12.1 mm x 4.6 mm mainly restricted by the chip package requirement. The DR-MZI chip can potentially have a smaller footprint due to its much more compact switch element, suitable for high-density on-chip optical data exchange.
Ultra-large-scale Silicon Optical Switches

Lei Qiao,Weijie Tang,Tao Chu

DOI: https://doi.org/10.1109/group4.2016.7739115

2016-01-01

Abstract:32 × 32 electro-optic and 64 × 64 thermal-optic Mach-Zehnder interferometer (MZI)-based switches were demonstrated using a 180-nm CMOS process. To the best of our knowledge, both switches that were demonstrated were the largest-scale electro-optic and thermal-optical silicon switches available.
Broadband 4 $\times$ 4 Nonblocking Silicon Electrooptic Switches Based on Mach–Zehnder Interferometers

Liangjun Lu,Linjie Zhou,Zuxiang Li,Xinwan Li,Jianping Chen

DOI: https://doi.org/10.1109/jphot.2015.2390195

IF: 2.4

2015-01-01

IEEE Photonics Journal

Abstract:We report a broadband 4 × 4 nonblocking optical switch with Mach-Zehnder interferometers (MZIs) as switch elements on a silicon platform. Silicon resistive heaters are used for phase error correction of MZI arms with total thermooptic power consumption of 33.7 mW. Fast switching is enabled by p-i-n diodes, with average electrooptic tuning power of 14.3 mW for the 24 essential switching states as required for nonblocking routing. The average on-chip insertion loss is 5.8-7.7 dB and crosstalk better than -12 dB at wavelength of 1550 nm. Optical transmission experiments using a high-throughput 50 Gb/s quadrature phase-shift keying (QPSK) optical signal reveal that no significant deterioration is observed on constellation diagrams.
16*16 single chip optical switch array in lithium niobate

M. Wale,P. Duthie

DOI: https://doi.org/10.1049/EL:19910793

1991-07-04

Abstract:The design and construction of a lithium niobate 16*16 guided wave switch with a Benes architecture is described. The switch is interfaced to polarisation maintaining optical fibre, has 56 elements, switching voltages ranging between 35 and 60 V and crosstalk suppression of 20 dB at 1.3 mu m wavelength. >

Physics,Mathematics,Engineering
4x4 Silicon Non-Blocking Electro-Optic Switches Based On Double-Ring Assisted Mach-Zehnder Interferometers

Liangjun Lu,Linjie Zhou,Zuxiang Li,Dong Li,Shuoyi Zhao,Xinwan Li,Jianping Chen

DOI: https://doi.org/10.1109/ECOC.2015.7341724

2015-01-01

Abstract:We demonstrate a 4x4 silicon switch using double-ring assisted Mach-Zehnder interferometers. The maximum electro-optic switching power consumption is 1.38 mW, with phase correction power consumption 22.37 mW. The on-chip insertion loss is <5.8 dB and crosstalk <-18 dB.
A 4×4 Strictly Nonblocking Silicon-on-Insulator Thermo-Optic Switch Matrix

Yang Di,Li Yan-Ping,Chen Shao-Wu,Yu Jin-Zhong

DOI: https://doi.org/10.1088/0256-307x/22/6/041

2005-01-01

Chinese Physics Letters

Abstract:A4 × 4 strictly nonblocking thermo-optic switch matrix implemented with a 2 × 2 Mach-Zehnder switch unit was fabricated in silicon-on-insulator wafer. Insertion losses of the shortest and the longest path in the device are about 14.8dB and 19.2dB, respectively. The device presents a very low loss dependent on wavelength. For one switch unit, the power consumption needed for operation is measured to be 0.270 W-0.288 W and the switching time is about 13 ± 1 μs.
4×4 Nonblocking Optical Switch Fabric Based on Cascaded Multimode Interferometers

Zuxiang Li,Linjie Zhou,Liangjun Lu,Shuoyi Zhao,Dong Li,Jianping Chen

DOI: https://doi.org/10.1364/prj.4.000021

IF: 7.6

2016-01-01

Photonics Research

Abstract:We experimentally demonstrate a 4×4 strictly non-blocking silicon thermo-optic (TO) switch fabric consisting of three stages of tunable generalized Mach-Zehnder interferometers. Measurements show that the worst crosstalk of all switching states is -7.16 dB. The average TO switching power consumption is 104.84 mW.
Strictly non-blocking 4×4 silicon electro-optic switch based on a double layer network architecture

Zhanzhi Guo,Liangjun Lu,Shuoyi Zhao,Linjie Zhou,Jianping Chen

DOI: https://doi.org/10.1109/GROUP4.2016.7739125

2016-01-01

Abstract:We report a 4×4 silicon switch based on a double layer network architecture by cascading three stages of electrically tunable Mach-Zehnder interferometers (MZIs). Preliminary experiment reveals that the switch has on-chip insertion loss less than 4 dB and crosstalk lower than -30 dB.
Large-Scale Silicon Optical Switches for Optical Interconnection

Lei Qiao,Weijie Tang,Tao Chu

DOI: https://doi.org/10.1117/12.2248412

2016-01-01

Abstract:Large-scale optical switches are greatly demanded in building optical interconnections in data centers and high performance computers (HPCs). Silicon optical switches have advantages of being compact and CMOS process compatible, which can be easily monolithically integrated. However, there are difficulties to construct large ports silicon optical switches. One of them is the non-uniformity of the switch units in large scale silicon optical switches, which arises from the fabrication error and causes confusion in finding the unit optimum operation points. In this paper, we proposed a method to detect the optimum operating point in large scale switch with limited build-in power monitors. We also propose methods for improving the unbalanced crosstalk of cross/bar states in silicon electro-optical MZI switches and insertion losses. Our recent progress in large scale silicon optical switches, including 64 × 64 thermal-optical and 32 × 32 electro-optical switches will be introduced. To the best our knowledge, both of them are the largest scale silicon optical switches in their sections, respectively. The switches were fabricated on 340-nm SOI substrates with CMOS 180- nm processes. The crosstalk of the 32 × 32 electro-optic switch was -19.2dB to -25.1 dB, while the value of the 64 × 64 thermal-optic switch was -30 dB to -48.3 dB.

16×16 Non-Blocking Silicon Thermo-Optic Switch with a Benes Architecture

16×16 Non-blocking silicon electro-optic switch based on Mach-Zehnder interferometers

16 × 16 Silicon Optical Switch Based on Dual-Ring-Assisted Mach–Zehnder Interferometers

16 × 16 Non-Blocking Silicon Optical Switch Based on Electro-Optic Mach-Zehnder Interferometers.

16 X 16 Silicon Mach-Zehnder Interferometer Switch Actuated With Waveguide Microheaters

Scalable Nonblocking &Lt;inline-Formula&gt; &Lt;tex-Math Notation="latex"&gt;$4\times4$ &Lt;/tex-Math&gt; &Lt;/inline-Formula&gt; Silicon Optical Switch Based on Dual-Microring Resonators

Non-blocking 8&#x00d7;8 Silicon Electro-Optic Switch

Fast, High-radix Silicon Photonic Switches.

4 × 4 Nonblocking Silicon Thermo-Optic Switches Based on Multimode Interferometers

Silicon Non-blocking 4×4 Optical Switch Chip Integrated With Both Thermal and Electro-optic Tuners

32 × 32 Silicon Electro-Optic Switch with Built-in Monitors and Balanced-Status Units.

High-speed 8&amp;#x00d7;8 Electro-Optic Switch Matrix Based on Silicon PIN Structure Waveguides

Silicon Large-Scale Optical Switches Using MZIs and Dual-Ring Assisted MZIs

Ultra-large-scale Silicon Optical Switches

Broadband 4 $\times$ 4 Nonblocking Silicon Electrooptic Switches Based on Mach–Zehnder Interferometers

16*16 single chip optical switch array in lithium niobate

4x4 Silicon Non-Blocking Electro-Optic Switches Based On Double-Ring Assisted Mach-Zehnder Interferometers

A 4×4 Strictly Nonblocking Silicon-on-Insulator Thermo-Optic Switch Matrix

4×4 Nonblocking Optical Switch Fabric Based on Cascaded Multimode Interferometers

Strictly non-blocking 4×4 silicon electro-optic switch based on a double layer network architecture

Large-Scale Silicon Optical Switches for Optical Interconnection

Scalable Nonblocking &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$4\times4$ &Lt;/tex-Math> &Lt;/inline-Formula> Silicon Optical Switch Based on Dual-Microring Resonators

Non-blocking 8×8 Silicon Electro-Optic Switch

High-speed 8×8 Electro-Optic Switch Matrix Based on Silicon PIN Structure Waveguides