A Single InP Nanowire Room-Temperature Photodetector

Xin Yan,Junshuai Li,Fukuan Sun,Yao Wu,Bang Li,Xia Zhang,Xiaomin Ren

DOI: https://doi.org/10.1364/acpc.2015.am2a.4

2015-01-01

Abstract:A room-temperature photodetector based on a single zinc-blende InP nanowire is fabricated, which shows a remarkable photoresponsivity of 0.1 A/W under 532 nm laser excitation at a low power density of 150 μW cm-2.

What problem does this paper attempt to address?

Enhancing Sensitivity of A Single Zno Micro-/Nanowire Photodetector by Piezo-Phototronic Effect

Qing Yang,Xin Guo,Wenhui Wang,Yan Zhang,Sheng Xu,Der Hsien Lien,Zhong Lin Wang

DOI: https://doi.org/10.1021/nn1022878

IF: 17.1

2010-01-01

ACS Nano

Abstract:We demonstrate the piezoelectric effect on the responsivity of a metal-semiconductor-metal ZnO micro-/nanowire photodetector. The responsivity of the photodetector is respectively enhanced by 530%, 190%, 9%, and 15% upon 4.1 pW, 120.0 pW, 4.1 nW, and 180.4 nW UV light illumination onto the wire by introducing a -0.36% compressive strain in the wire, which effectively tuned the Schottky barrier height at the contact by the produced local piezopotential. After a systematic study on the Schottky barrier height change with tuning of the strain and the excitation light intensity, an in-depth understanding is provided about the physical mechanism of the coupling of piezoelectric, optical, and semiconducting properties. Our results show that the piezo-phototronic effect can enhance the detection sensitivity more than 5-fold for pW levels of light detection.
Self-powered InP Nanowire Photodetector for Single Photon Level Detection at Room Temperature

Yi Zhu,Vidur Raj,Ziyuan Li,Hark Hoe Tan,Chennupati Jagadish,Lan Fu

DOI: https://doi.org/10.48550/arXiv.2109.07099

2021-09-15

Abstract:Highly sensitive photodetectors with single photon level detection is one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing. Currently, most of the single-photon detection technologies require external biasing at high voltages and/or cooling to low temperatures, posing great limitations for wider applications. Here, we demonstrate InP nanowire array photodetectors that can achieve single-photon level light detection at room temperature without an external bias. We use top-down etched, heavily doped p-type InP nanowires and n-type AZO/ZnO carrier selective contact to form a radial p-n junction with a built-in electric field exceeding 3x10^5 V/cm at 0 V. The device exhibits broadband light sensitivity and can distinguish a single photon per pulse from the dark noise at 0 V, enabled by its design to realize near-ideal broadband absorption, extremely low dark current, and highly efficient charge carrier separation. Meanwhile, the bandwidth of the device reaches above 600 MHz with a timing jitter of 538 ps. The proposed device design provides a new pathway towards low-cost, high-sensitivity, self-powered photodetectors for numerous future applications.

Optics,Emerging Technologies,Applied Physics
Nanowire Piezo‐phototronic Photodetector: Theory and Experimental Design

Ying Liu,Qing Yang,Yan Zhang,Zongyin Yang,Zhong Lin Wang

DOI: https://doi.org/10.1002/adma.201104333

IF: 29.4

2012-01-01

Advanced Materials

Abstract:The piezo-phototronic effect is about the use of the inner crystal piezoelectric potential to tune/control charge carrier generation, separation, transport and/or recombination in optoelectronic devices. In this paper, a theoretical model for describing the characteristics of a metal-nanowire-metal structured piezophototronic photodetector is constructed. Numerical simulations fit well to the experimental results of a CdS and ZnO nanowire based visible and UV detector, respectively.
GaAs/AlGaAs Nanowire Photodetector

X. Dai,S. Zhang,Z. Wang,G. Adamo,H. Liu,Y. Huang,C. Couteau,C. Soci

DOI: https://doi.org/10.48550/arXiv.1601.02312

2016-01-11

Mesoscale and Nanoscale Physics

Abstract:We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial architecture, in which built-in electric fields at the semiconductor heterointerface and at the metal/semiconductor Schottky contact promote photogenerated charge separation, enhancing photosensitivity. The spectral photoconductive response shows that the nanowire supports resonant optical modes in the near-infrared region, which lead to large photocurrent density in agreement with the predictions of electromagnetic and transport computational models. The single nanowire photodetector shows remarkable peak photoresponsivity of 0.57 A/W, comparable to large-area planar GaAs photodetectors on the market, and a high detectivity of 7.2 10^10 cm\sqrt{Hz}/W at {\lambda}=855 nm. This is promising for the design of a new generation of highly sensitive single nanowire photodetectors by controlling optical mode confinement, bandgap, density of states, and electrode engineering.
Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire

Xutao Zhang,Hai Huang,Xiaomei Yao,Ziyuan Lo,Chen Zhou,Xu Zhang,Pingping Chen,Lan Fu,Xiaohao Zhou,Jianlu Wang,Weida Hu,Wei Lu,Jin Zou,Hark Hoe Tan,Chennupati Jagadish

DOI: https://doi.org/10.1021/acsnano.8b09649

IF: 17.1

2019-01-01

ACS Nano

Abstract:One-dimensional InAs nanowire (NW)-based photodetectors have been widely studied due to their potential application in mid-wavelength infrared (MWIR) photon detection. However, the limited performance and complicated photoresponse mechanism of InAs NW-based photodetectors have held back their true potential for real application. In this study, we developed ferroelectric polymer P(VDF-TrFE)-coated InAs NW-based photodetectors and demonstrated that the electrostatic field caused by polarized ferroelectric materials modifies the surface electron-hole distribution as well as the band structure of InAs NWs, resulting in ultrasensitive photoresponse and a wide photodetection spectral range. Our single InAs NW photodetectors exhibit a high responsivity (R) of 1.6 x 10(4) A W-1 as well as a corresponding detectivity (D*) of 1.4 x 10(12) cm.Hz(1/2) W-1 at a light wavelength of 3.5 mu m without an applied gate voltage, similar to 3-4 orders higher than the maximum value of photoresponsivity reported or commercially used MWIR photodetectors. Moreover, our device shows below band gap photoresponse for 4.3 mu m MWIR light with R of 9.6 x 10(2) A W-1 as well as a corresponding D* of similar to 8.5 x 10(10) cm.Hz(1/2) W-1 at 77 K. Our study shows that this approach is promising for fabrication of high-performance NW-based photodetectors for MWIR photon detection.
Room-temperature Near-Infrared Photodetectors Based on Single Heterojunction Nanowires.

Liang Ma,Wei Hu,Qinglin Zhang,Pinyun Ren,Xiujuan Zhuang,Hong Zhou,Jinyou Xu,Honglai Li,Zhengping Shan,Xiaoxia Wang,Lei Liao,H. Q. Xu,Anlian Pan

DOI: https://doi.org/10.1021/nl403951f

IF: 10.8

2014-01-01

Nano Letters

Abstract:Nanoscale near-infrared photodetectors are attractive for their potential applications in integrated optoelectronic devices. Here we report the synthesis of GaSb/GaInSb p-n heterojunction semiconductor nanowires for the first time through a controllable chemical vapor deposition (CVD) route. Based on these nanowires, room-temperature, high-performance, near-infrared photodetectors were constructed. The fabricated devices show excellent light response in the infrared optical communication region (1.55 mu m), with an external quantum efficiency of 10(4), a responsivity of 10(3) A/W, and a short response time of 2 ms, which shows promising potential applications in integrated photonics and optoelectronics devices or systems.
High-detectivity InAs Nanowire Photodetectors with Spectral Response from Ultraviolet to Near-Infrared

Zhe Liu,Tao Luo,Bo Liang,Gui Chen,Gang Yu,Xuming Xie,Di Chen,Guozhen Shen

DOI: https://doi.org/10.1007/s12274-013-0356-0

2013-01-01

Abstract:InAs is a direct, narrow band gap (0.354 eV) material with ultrahigh electron mobility, and is potentially a good optoelectronic device candidate in the wide UV-visible-near-infrared region. In this work we report the fabrication of InAs nanowire-based photodetectors, which showed a very high photoresponse over a broad spectral range from 300 to 1,100 nm. The responsivity, external quantum efficiency and detectivity of the device were respectively measured to be 4.4 × 10 3 AW −1 , 1.03 × 10 6 %, and 2.6 × 10 11 Jones to visible incident light. Time dependent measurements at different wavelengths and under different light intensities also demonstrated the fast, reversible, and stable photoresponse of our device. Theoretical calculations of the optical absorption and the electric field component distribution were also performed to elucidate the mechanism of the enhanced photoresponse. Our results demonstrate that the single-crystalline InAs NWs are very promising candidates for the design of high sensitivity and high stability nanoscale photodetectors with a broad band photoresponse.
Room-temperature, High-Gain, Broad-Spectrum InAs Nanowire Infrared Photodetectors

Weida Hu,Peng Wang,Nan Guo,Pingping Chen,Xiaoshuang Chen,Wei Lu

DOI: https://doi.org/10.1109/irmmw-thz.2015.7327564

2015-01-01

Abstract:In this paper, we review our recent progress on low dimensional room-temperature, high-gain, and broad-spectrum photodetectors based on InAs nanowires. Several novel infrared photodetectors based on InAs nanowire are fabricated showing a high photo-gain at room temperature.
Room-temperature single-photon detector based on single nanowire.

Wenjin Luo,Qianchun Weng,Mingsheng Long,Peng Wang,Fan Gong,Hehai Fang,Man Luo,Wenjuan Wang,Zhen Wang,Dingshan Zheng,Weida Hu,Xiaoshuang Chen,Wei Lu

DOI: https://doi.org/10.1021/acs.nanolett.8b01795

IF: 10.8

2018-01-01

Nano Letters

Abstract:Single-photon detectors that can resolve photon number play a key role in advanced quantum information technologies. Despite significant progress in improving conventional photon-counting detectors and developing novel device concepts, single-photon detectors that are capable of distinguishing incident photon number at room temperature are still very limited. We demonstrate a room-temperature photon-number-resolving detector by integrating a field-effect transistor configuration with core/shell-like nanowires. The shell serves as a photosensitive gate, shielding negative back-gated voltage, and leads to a persistent photocurrent. At room temperature, our detector is demonstrated to identify 1, 2, and 3 photon-number states with a confidence of >82%. The detection efficiency is determined to be 23%, and the dark count rate is 1.87 X 10(-3) Hz. Importantly, benefiting from the anisotropic nature of 1D nanowires, the detector shows an intrinsic photon-polarization selection, which distinguishes itself from existing intensity single-photon detectors. The unique performance for the single-photon detectors based on single nanowire demonstrates the great potential for future single-photon detection applications.
Fast-speed and High-Gain Photodetectors of Individual Single Crystalline Zn3P2 Nanowires

Peicai Wu,Yu Dai,Yu Ye,Yang Yin,Lun Dai

DOI: https://doi.org/10.1039/c0jm02778b

2011-01-01

Journal of Materials Chemistry

Abstract:We report high-performance photodetectors of individual single crystalline Zn3P2 nanowires. A facile catalyst-free physical evaporation process was developed to synthesize high-quality single crystalline Zn3P2 nanowires (NWs) with high yield. A typical individual Zn3P2 NW photodetector exhibited fast speeds (the response and recovery times were less than 25 and 26 mu s, respectively) and high gain (similar to 470), which is an excellent result towards getting a balance in the speed and gain trade-off of the semiconductor nanostructure-based photodetectors. In addition, the device had the advantages of high photosensitivity (I-photo - I-dark/I-dark approximate to 100) and small device size (constructed on an individual nanowire). All these merits substantiate that the Zn3P2 nanowires can serve as excellent photoconductive materials, and the Zn3P2 NW photodetectors are very promising for practical applications.
Vis-IR wide-spectrum photodetector at room temperature based on p-n junction-type GaAs1-xSbx/InAs core-shell nanowire.

Xinzhe Wang,Dong Pan,Yuxiang Han,Mei Sun,Jianhua Zhao,Qing Chen

DOI: https://doi.org/10.1021/acsami.9b13559

IF: 9.5

2019-01-01

ACS Applied Materials & Interfaces

Abstract:Infrared (IR) detection at room temperature is very important in many fields. Nanoscale wide-spectrum photodetectors covering IR range are still rare, although they are desired in many applications, such as in integrated optoelectronic devices. Here, we report a new kind of photodetector based on p-n heterojunction-type GaAs1-xSbx/InAs core-shell nanowires. The photodetectors demonstrate high response to the lights ranging from visible light (488 nm) to short-wavelength IR (1800 nm) at room temperature under a very low bias voltage of 0.3 V. The high performances of the devices include an ultralow dark current (32 pA at room temperature), a fast response speed (0.45 ms) to 633 nm light, high responsivity to 1310 nm telecommunication light (0.12 A/W), and high response even to 1800 nm light (on/off ratio of 2.5), etc. Besides, the devices also show excellent rectifying I-V characteristics (the current rectification ratio being ~178 in a voltage range of ±0.3 V). These results suggest that the GaAs1-xSbx/InAs core-shell nanowires devices are promising for applications in nanoelectronic devices, optoelectronic devices and integrated optoelectronic devices.
Recent Progress on Infrared Photodetectors Based on InAs and InAsSb Nanowires

Tengfei Xu,Hailu Wang,Xiaoyao Chen,Man Luo,Lili Zhang,Yueming Wang,Fansheng Chen,Chongxin Shan,Chenhui Yu

DOI: https://doi.org/10.1088/1361-6528/ab8591

IF: 3.5

2020-01-01

Nanotechnology

Abstract:In recent years, quasi-1D semiconductor nanowires have attracted significant research interest in the field of optoelectronic devices. Indium arsenide (InAs) nanowire, a III–V compound semiconductor structure with a narrow band gap, shows high electron mobility and high absorption from the visible to the mid-wave infrared (MWIR), holding promise for room-temperature high-performance infrared photodetectors. Therefore, the material growth, device preparation and performance characteristics have attracted increasing attention, enabling high-sensitivity InAs nanowire photodetector from the visible to the MWIR at room temperature. This review starts by discussing the growth process of the low-dimensional structure and elementary properties of the material, such as the crystalline phase, mobility, morphology, surface states and metal contacts. Then, three solutions, including the visible-light-assisted infrared photodetection technology, vertical nanowire-array technology and band engineering by the growth of InAsSb nanowires with increasing Sb components, are elaborated to obtain longer cut-off wavelength MWIR photodetectors based on single InAs nanowire and its heterojunction structure. Finally, the potential and challenges of the state-of-the-art optoelectronic technologies for InAs nanowire MWIR photodetectors are summarized and compared, and preliminary suggestions for the technical development route and prospects are presented. This review mainly delineates the research progress of material growth, device fabrication and performance characterization of InAs nanowire MWIR photodetectors, providing a reference for the development of the next-generation high-performance photodetectors over a wide spectrum range.
InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection

Ziyuan Li,Zahra Azimi,Zhe Li,Yang Yu,Longsibo Huang,Weiqi Jin,Hark Hoe Tan,Chennupati Jagadish,Jennifer Wong-Leung,Lan Fu

DOI: https://doi.org/10.1039/d3nr00340j

IF: 6.7

2023-05-16

Nanoscale

Abstract:Detection of short-wave infrared (SWIR) and mid-wave infrared (MWIR) emission remain challenging despite their importance for many emerging applications, including night vision, space imaging and remote sensing. III-V compound semiconductor materials such as InAs has an ideal band gap covering spectral regime from near infrared (NIR), SWIR to MWIR. However, due to their high dark current, InAs photodetectors normally require a low-temperature operation, which has greatly limited their practical applications. Here, we report the engineering of InAs nanowire arrays to achieve efficient photodetection for wavelengths from NIR to MIR (3500 nm). By using selective area metal-organic vapour-phase epitaxy, we optimise the nanowire growth temperature and V/III ratio to achieve WZ-based InAs nanowire arrays with a high WZ density of ~ 67%. Due to the n-type background doping of the InAs nanowires and the p-type InAs substrate used for nanowire growth, a p-n junction is formed, and an ultrawide room-temperature photoresponse ranging from 500 to 3500 nm was obtained under zero bias. It is found that the waveguide modes supported by the InAs nanowires result in a high peak responsivity of 0.44 A/W and detectivity of 1.25×1010 cm√Hz/W at a wavelength of 1600 nm, at a bias voltage of only -0.1 V and relatively high operating temperature of 150 K. Such a strong light trapping effect in the InAs nanowires also leads to a significantly lower reflection compared to that observed in planar photodetectors, and thus a strong absorption in the substrate extending the photoresponse up to the InAs bandgap edge of 3500 nm. Our work shows that through careful material optimisation and device design, InAs nanowire arrays are promising for the development of high-performance ultra-broadband infrared photodetectors from NIR, SWIR to MWIR.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
High-Performance Room-Temperature UV-IR Photodetector Based on the InAs Nanosheet and Its Wavelength- and Intensity-Dependent Negative Photoconductivity

Xinzhe Wang,Dong Pan,Mei Sun,Fengjiao Lyu,Jianhua Zhao,Qing Chen

DOI: https://doi.org/10.1021/acsami.1c05226

2021-05-25

Abstract:Low-dimensional narrow-band-gap III–V semiconductors have great potential in high-performance electronics, photonics, and quantum devices. However, high-performance nanoscale infrared photodetectors based on isolated two-dimensional (2D) III–V compound semiconductors are still rare. In this work, we demonstrate a new type of photodetector based on the InAs nanosheet. The photodetector has high optoelectronic response in the ultraviolet-infrared band (325–2100 nm) at room temperature. The high-performance photodetector has very high responsivity (∼1231 A/W), EQE (2.2 × 105 %), and detectivity (5.46 × 1010 Jones) to 700 nm light at low operating voltage (∼0.1 V). These results indicate that 2D InAs nanosheet devices have great potential in nano-optoelectronic devices and integrated optoelectronic devices. In addition, we observe for the first time that the InAs nanosheet devices have a negative photoconductivity (NPC) that is not only affected by the wavelength but also related to the optical power intensity of the light. After analyzing experimental data, we propose that the origin of the NPC may come from electron trapping, and two competing mechanisms of optical absorption and the photogating effect in the photoelectric response process cause the dependence on the light wavelength and optical power intensity.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c05226?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c05226</a>.Wavelength-dependent photoresponsivity of the devices; influence of gate voltage on the photoelectric performance of the devices; enlarged switching response curve; experimental setup for measuring the response time; I–V curves and the intensity-dependence of Iphoto under the illumination of the lights with 325, 633, and 1310 nm wavelengths; effect of PMMA coating; transfer curves in linear coordinates; and statistical results of the photoelectric performance of the devices (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c05226/suppl_file/am1c05226_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single Inas Nanowire

Hehai Fang,Weida Hu,Peng Wang,Nan Guo,Wenjin Luo,Dingshan Zheng,Fan Gong,Man Luo,Hongzheng Tian,Xutao Zhang,Chen Luo,Xing Wu,Pingping Chen,Lei Liao,Anlian Pan,Xiaoshuang Chen,Wei Lu

DOI: https://doi.org/10.1021/acs.nanolett.6b02860

IF: 10.8

2016-01-01

Nano Letters

Abstract:One-dimensional InAs nanowires (NWs) have been widely researched in recent years. Features of high mobility and narrow bandgap reveal its great potential of optoelectronic applications. However, most reported work about InAs NW-based photodetectors is limited to the visible waveband. Although some work shows certain response for near-infrared light, the problems of large dark current and small light on/off ratio are unsolved, thus significantly restricting the detectivity. Here in this work, a novel "visible light-assisted dark-current suppressing method" is proposed for the first time to reduce the dark current and enhance the infrared photodetection of single InAs NW photodetectors. This method effectively increases the barrier height of the metal-semiconductor contact, thus significantly making the device a metal-semiconductor-metal (MSM) photodiode. These MSM photodiodes demonstrate broadband detection from less than 1 μm to more than 3 μm and a fast response of tens of microseconds. A high detectivity of ∼1012 Jones has been achieved for the wavelength of 2000 nm at a low bias voltage of 0.1 V with corresponding responsivity of as much as 40 A/W. Even for the incident wavelength of 3113 nm, a detectivity of ∼1010 Jones and a responsivity of 0.6 A/W have been obtained. Our work has achieved an extended detection waveband for single InAs NW photodetector from visible and near-infrared to mid-infrared. The excellent performance for infrared detection demonstrated the great potential of narrow bandgap NWs for future infrared optoelectronic applications.
High-Responsivity Photodetection by a Self-Catalyzed Phase-Pure P-Gaas Nanowire

Hassan Ali,Yunyan Zhang,Jing Tang,Kai Peng,Sibai Sun,Yue Sun,Feilong Song,Attia Falak,Shiyao Wu,Chenjiang Qian,Meng Wang,Zhanchun Zuo,Kui-Juan Jin,Ana M. Sanchez,Huiyun Liu,Xiulai Xu

DOI: https://doi.org/10.1002/smll.201704429

IF: 13.3

2018-01-01

Small

Abstract:Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form carrier traps and nonradiative recombination centers. Here, self-catalyzed p-type GaAs nanowires (NWs) with a pure zinc blende (ZB) structure are first developed, and then a photodetector made from these NWs is fabricated. Due to the absence of stacking faults and suppression of large amount of defects with deep energy levels, the photodetector exhibits room-temperature high photoresponsivity of 1.45 × 105 A W-1 and excellent specific detectivity (D*) up to 1.48 × 1014 Jones for a low-intensity light signal of wavelength 632.8 nm, which outperforms previously reported NW-based photodetectors. These results demonstrate these self-catalyzed pure-ZB GaAs NWs to be promising candidates for optoelectronics applications.
High-Performance Near-Infrared Photodetector Based on PbS Colloidal Quantum Dots/ZnO-Nanowires Hybrid Nanostructures

Hefu Zhong,Libin Tang,Pin Tian,Lijing Yu,Wenbin Zuo,Kar Seng Teng

DOI: https://doi.org/10.3390/s23042254

IF: 3.9

2023-02-18

Sensors

Abstract:Quantum dots have found significant applications in photoelectric detectors due to their unique electronic and optical properties, such as tunable bandgap. Recently, colloidal quantum dots (CQDs) have attracted much interest because of the ease of controlling the dot size and low production cost. In this paper, a high-performance ZnO/PbS heterojunction photodetector was fabricated by spin-coating PbS CQDs onto the surface of a hydrothermally grown vertical array of ZnO nanowires (NWs) on an indium tin oxide (ITO) substrate. Under 940 nm near-infrared light illumination, the device demonstrated a responsivity and detectivity of ~3.9 × 104 A/W and ~9.4 × 1013 Jones, respectively. The excellent performances and low cost of this nanocomposite-based photodetector show that it has the potential for widespread applications ranging from medical diagnosis to environmental monitoring.

engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation
High-responsivity Photodetection Using a Single P-Type GaAs Nanowire (conference Presentation)

Hassan Ali,Yunyan Zhang,Ana M. Sanchez,Huiyun Liu,Xiulai Xu

DOI: https://doi.org/10.1117/12.2299472

2018-01-01

Abstract:Foreign-catalyzed assisted grown nanowires deteriorate the performance of optoelectronic devices because of incorporation of foreign impurities into the nanowires. We report on growth self-catalyzed p-type GaAs nanowires (NWs) with pure zinc blende (ZB) structure, and the fabrication of single-NW-based photodetector. The carrier mobility and concentration of GaAs field effect transistor are characterized both at room temperature and at low temperature respectively. Due to the absence of stacking faults and single crystal phase of the NWs, the photodetector exhibits room-temperature high photo-responsivity over than 105 A W-1 and great specific detectivity, which outperforms previously reported NW-based photodetectors. These results demonstrate that these self-catalyzed pure-ZB GaAs NWs to be promising candidates for optoelectronics applications. In addition, optoelectronic properties of single quantum dots embedded in single nanowires will be represented with an applied magnetic field.
Single-GaSb-nanowire-based Room Temperature Photodetectors with Broad Spectral Response

Tao Luo,Bo Liang,Zhe Liu,Xuming Xie,Zheng Lou,Guozhen Shen

DOI: https://doi.org/10.1007/s11434-014-0687-6

IF: 18.9

2015-01-01

Science Bulletin

Abstract:Single-gallium antimonide (GaSb)-nanowire-based photodetectors were fabricated on both rigid SiO 2 /Si substrate and flexible polyethylene terephthalate (PET) substrates, both of which exhibited high responsivity, fast-response, and long-term stability in photoswitching over a broad spectral range from ultraviolet to near infrared. Besides, the as-fabricated rigid device exhibited high responsivity of 7,350 A/W under illumination of λ = 350 nm and light intensity P = 0.2 mW/cm 2 , while the flexible device displays higher detectivity of 9.67 × 10 9 jones at 700 nm than the rigid one and lower noise equivalent power (NEP, NEP_700 nm^* = 2.0 × 10 −12 W/Hz 1/2 ) for the much lower dark current on PET. The high responsivity, broad spectral detection from ultraviolet to near-infrared and long-term stability make GaSb nanowire one of the most important candidates to construct advanced optical sensors or other optoelectronic devices.
High-Responsivity Photodetection by Self-Catalyzed Phase-Pure P-GaAs Nanowire

Hassan Ali,Yunyan Zhang,Jing Tang,Kai Peng,Sibai Sun,Yue Sun,Feilong Song,Attia Falak,Shiyao Wu,Chenjiang Qian,Meng Wang,Zhanchun Zuo,Kui-Juan Jin,Ana M. Sanchez,Huiyun Liu,Xiulai Xu

DOI: https://doi.org/10.1002/smll.201704429

2018-04-20

Abstract:Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form carrier traps and non-radiative recombination centers. Here, we first developed self-catalyzed p-type GaAs nanowires (NWs) with pure zinc blende (ZB) structure, and then fabricated photodetector made by these NWs. Due to absence of stacking faults and suppression of large amount of defects with deep energy levels, the photodetector exhibits room-temperature high photo responsivity of 1.45 x 105 A W^-1 and excellent specific detectivity (D*) up to 1.48 x 10^14 Jones for low-intensity light signal of wavelength 632.8 nm, which outperforms previously reported NW-based photodetectors. These results demonstrate that these self-catalyzed pure-ZB GaAs NWs to be promising candidates for optoelectronics applications.

Mesoscale and Nanoscale Physics,Applied Physics

A Single InP Nanowire Room-Temperature Photodetector

Enhancing Sensitivity of A Single Zno Micro-/Nanowire Photodetector by Piezo-Phototronic Effect

Self-powered InP Nanowire Photodetector for Single Photon Level Detection at Room Temperature

Nanowire Piezo‐phototronic Photodetector: Theory and Experimental Design

GaAs/AlGaAs Nanowire Photodetector

Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire

Room-temperature Near-Infrared Photodetectors Based on Single Heterojunction Nanowires.

High-detectivity InAs Nanowire Photodetectors with Spectral Response from Ultraviolet to Near-Infrared

Room-temperature, High-Gain, Broad-Spectrum InAs Nanowire Infrared Photodetectors

Room-temperature single-photon detector based on single nanowire.

Fast-speed and High-Gain Photodetectors of Individual Single Crystalline Zn3P2 Nanowires

Vis-IR wide-spectrum photodetector at room temperature based on p-n junction-type GaAs1-xSbx/InAs core-shell nanowire.

Recent Progress on Infrared Photodetectors Based on InAs and InAsSb Nanowires

InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection

High-Performance Room-Temperature UV-IR Photodetector Based on the InAs Nanosheet and Its Wavelength- and Intensity-Dependent Negative Photoconductivity

Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single Inas Nanowire

High-Responsivity Photodetection by a Self-Catalyzed Phase-Pure P-Gaas Nanowire

High-Performance Near-Infrared Photodetector Based on PbS Colloidal Quantum Dots/ZnO-Nanowires Hybrid Nanostructures

High-responsivity Photodetection Using a Single P-Type GaAs Nanowire (conference Presentation)

Single-GaSb-nanowire-based Room Temperature Photodetectors with Broad Spectral Response

High-Responsivity Photodetection by Self-Catalyzed Phase-Pure P-GaAs Nanowire