Vis-IR wide-spectrum photodetector at room temperature based on p-n junction-type GaAs1-xSbx/InAs core-shell nanowire.

Xinzhe Wang,Dong Pan,Yuxiang Han,Mei Sun,Jianhua Zhao,Qing Chen

DOI: https://doi.org/10.1021/acsami.9b13559

IF: 9.5

2019-01-01

ACS Applied Materials & Interfaces

Abstract:Infrared (IR) detection at room temperature is very important in many fields. Nanoscale wide-spectrum photodetectors covering IR range are still rare, although they are desired in many applications, such as in integrated optoelectronic devices. Here, we report a new kind of photodetector based on p-n heterojunction-type GaAs1-xSbx/InAs core-shell nanowires. The photodetectors demonstrate high response to the lights ranging from visible light (488 nm) to short-wavelength IR (1800 nm) at room temperature under a very low bias voltage of 0.3 V. The high performances of the devices include an ultralow dark current (32 pA at room temperature), a fast response speed (0.45 ms) to 633 nm light, high responsivity to 1310 nm telecommunication light (0.12 A/W), and high response even to 1800 nm light (on/off ratio of 2.5), etc. Besides, the devices also show excellent rectifying I-V characteristics (the current rectification ratio being ~178 in a voltage range of ±0.3 V). These results suggest that the GaAs1-xSbx/InAs core-shell nanowires devices are promising for applications in nanoelectronic devices, optoelectronic devices and integrated optoelectronic devices.