Abstract:Detection of short-wave infrared (SWIR) and mid-wave infrared (MWIR) emission remain challenging despite their importance for many emerging applications, including night vision, space imaging and remote sensing. III-V compound semiconductor materials such as InAs has an ideal band gap covering spectral regime from near infrared (NIR), SWIR to MWIR. However, due to their high dark current, InAs photodetectors normally require a low-temperature operation, which has greatly limited their practical applications. Here, we report the engineering of InAs nanowire arrays to achieve efficient photodetection for wavelengths from NIR to MIR (3500 nm). By using selective area metal-organic vapour-phase epitaxy, we optimise the nanowire growth temperature and V/III ratio to achieve WZ-based InAs nanowire arrays with a high WZ density of ~ 67%. Due to the n-type background doping of the InAs nanowires and the p-type InAs substrate used for nanowire growth, a p-n junction is formed, and an ultrawide room-temperature photoresponse ranging from 500 to 3500 nm was obtained under zero bias. It is found that the waveguide modes supported by the InAs nanowires result in a high peak responsivity of 0.44 A/W and detectivity of 1.25×1010 cm√Hz/W at a wavelength of 1600 nm, at a bias voltage of only -0.1 V and relatively high operating temperature of 150 K. Such a strong light trapping effect in the InAs nanowires also leads to a significantly lower reflection compared to that observed in planar photodetectors, and thus a strong absorption in the substrate extending the photoresponse up to the InAs bandgap edge of 3500 nm. Our work shows that through careful material optimisation and device design, InAs nanowire arrays are promising for the development of high-performance ultra-broadband infrared photodetectors from NIR, SWIR to MWIR.

Room-temperature Near-Infrared Photodetectors Based on Single Heterojunction Nanowires.

Vis-IR wide-spectrum photodetector at room temperature based on p-n junction-type GaAs1-xSbx/InAs core-shell nanowire.

Single-GaSb-nanowire-based Room Temperature Photodetectors with Broad Spectral Response

Recent Progress on Infrared Photodetectors Based on InAs and InAsSb Nanowires

Short-Wave Near-Infrared Polarization Sensitive Photodetector Based on GaSb Nanowire

Near-Infrared Intersubband Photodetection in GaN/AlN Nanowires

GaAs/AlGaAs Nanowire Photodetector

InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection

Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

High-Performance Near-Infrared Photodetectors Based on P-Type SnX (X = S, Se) Nanowires Grown Via Chemical Vapor Deposition

A Room-Temperature Near-Infrared Photodetector Based on a MoS2/CdTe P-N Heterojunction with a Broadband Response Up to 1700 Nm

Ultralow Dark Current Room‐Temperature Infrared Photodetector Based on InSb Nanosheets/MoS2 Van Der Waals Heterostructure

InP-based High-Performance Extended Short Wavelength P-B-n Infrared Photodetector with InGaAs/GaAsSb Type-Ii Superlattice Absorption Layer

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Room-temperature InAsSb pBin detectors for mid-infrared application

Room-temperature, High-Gain, Broad-Spectrum InAs Nanowire Infrared Photodetectors

High Performance Rigid and Flexible Visible-Light Photodetectors Based on Aligned X(In, Ga)P Nanowire Arrays

Facile sulfur-assisted synthesis of GaAs nanowires /si heterojunctions for broadband self-powered photodetector

Colloidal InSb Quantum Dots/Organic Integrated Bulk Heterojunction for Fast and Sensitive Near‐Infrared Photodetectors

Comparative Study of InGaAs and GaAsSb Nanowires for Room Temperature Operation of Avalanche Photodiodes at 1.55 μm

On‐Chip Room‐Temperature Operated Short‐Wavelength‐Infrared Si:S Photodetector with a Vertical Junction