A Wide-Bandwidth W-Band LNA in GaAs 0.1 Μm Phemt Technology

Zekun Li,Pinpin Yan,Jixin Chen,Debin Hou
DOI: https://doi.org/10.1109/iws49314.2020.9360082
2020-01-01
Abstract:A W-band low noise amplifier (LNA) was designed and fabricated in 0.1 \mu \mathrm{m}$ GaAs pHEMT technology. Four common source stages are used for broadband matching by achieving maximum gain at different frequencies across the bandwidth. A degeneration inductor is used at the first stage to improve the noise figure (NF) and stability performance. A small Thin Film (TF) resistor is placed in series on DC supply line to improve the stability at low frequency. The LNA shows a measured small signal gain around 23 dB in W-band with a 3-dB bandwidth of 28 GHz (73-101 GHz). The simulated minimum noise figure (NF min ) is 4.77 dB at 92 GHz and the noise figure is less than 5.5 dB. The power consumption is 96 mW under a power supply voltage of 2 V. The chip size is 1.48 × 0.66 mm 2 including the pads. The results show that the proposed LNA achieves competitive gain with remarkable bandwidth in W-band.
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