Abstract:Movement trajectory of diamond tool during an ultra-precision cutting may be nonlinear due to external vibrations. Hence, we investigate nanoscale cutting of monocrystalline silicon using molecular dynamics simulation when the diamond tool trajectory contains an arc segment. Surface morphology, atomic displacement, radial distribution function, coordination values, common neighbor analysis, temperature variation and distribution of von Mises stress and hydrostatic stress are studied by changing the arc radius of tool path. An optimal surface integrity for the workpieces is obtained when the arc radius is 30 angstrom. Displacement vector analysis shows that the atoms at the initial position between the diamond tool and the workpiece have relatively large displacement. Furthermore, cutting distance has great influence on radial distribution function and atomic coordination values. Dislocation analysis indicates that the subsurface of workpiece with the arc radius of 30 angstrom is the smoothest, while temperature analysis reveals that only the maximum temperature of this workpiece exceeds 1000 K. Finally, the stress analysis indicates that the average hydrostatic stress decreases before increasing with the arc radius. For comparison, the average von Mises stress increases gradually. In addition, peak value of the two average stresses resides at the middle and the end of the arc, respectively. The curve trajectory of the tool results in the concentration of the hydrostatic stress and the von Mises stress in the local region of workpiece subsurface.

Analysis of the Influence of Tool Radius on Single Crystal Silicon Cutting Process Based on Molecular Dynamics

Analysis of the Influence of Tool Radius on Mechanical State of Monocrystalline Silicon During Nano-Cutting

The Effect of Tool Geometry on Subsurface Damage and Material Removal in Nanometric Cutting Single-Crystal Silicon by A Molecular Dynamics Simulation

A Study on Material Removal Caused by Phase Transformation of Monocrystalline Silicon During Nanocutting Process Via Molecular Dynamics Simulation

Effect of tool rake angle on the material removal mechanism transition of single-crystal silicon: a molecular dynamics study

Analysis about Diamond Tool Wear in Nano-Metric Cutting of Single Crystal Silicon Using Molecular Dynamics Method

Influence of crystallographic effect on tool wear, cutting stress, cutting temperature, cutting force and subsurface damage in nano cutting of single crystal silicon carbide

Influence of Tool Wear on Cutting Mechanism of Single Point Diamond Turning of Silicon

Research on Mechanism of Nanoscale Cutting with Arc Trajectory for Monocrystalline Silicon Based on Molecular Dynamics Simulation

A Numerical Analysis of Ductile Deformation during Nanocutting of Silicon Carbide via Molecular Dynamics Simulation

Anisotropy of Single-Crystal Silicon in Nanometric Cutting

Nano-Vibration Cutting Process of Single Crystal Silicon by Molecular Dynamics

Influence of laser nanostructured diamond tools on the cutting behavior of silicon by molecular dynamics simulation

Research on Nano-Cutting Processes Based on Parallel Molecular Dynamics

Materials Removal Mechanism for Ultra-Precise Cutting of Single-Crystal Silicon with Natural Single-Crystal Diamond Tools by Experiment and Atomic Simulation

A study on mechanism of nano-cutting single crystal silicon

Molecular Dynamics Simulation on the Mechanism of Nanometric Machining of Single-Crystal Silicon

Molecular Dynamics Analyze on Effects of Abrasive Size and Cut Depth on the Monocrystal Silicon Grinding

An experimental study of edge radius effect on cutting single crystal silicon

Numerical Investigation on Subsurface Damage in Nanometric Cutting of Single-Crystal Silicon at Elevated Temperatures

Simulation Study of Material Deformation in Monocrystal Silicon Nano-Machining