A numerical study on subsurface quality and material removal during ultrasonic vibration assisted cutting of monocrystalline silicon by molecular dynamics simulation

Houfu Dai,Jingjing Chen,Guojie Liu
DOI: https://doi.org/10.1088/2053-1591/ab0ccb
IF: 2.025
2019-03-20
Materials Research Express
Abstract:Molecular dynamics (MD) simulation is used to study the subsurface quality and material removal ofsingle crystal silicon with a diamond tool during ultrasonic elliptical vibration assisted cutting(UEVAC), 1D ultrasonic vibration assisted cutting (1D UVAC) and traditional cutting (TC) process. Inthe simulations, a long-range analytical bond order potential is used to describe the interactioninside the silicon specimen, providing a more accurate depiction of the atomic scale mechanisms ofductile plasticity, brittle fracture, and structural changes in silicon. The results show that UEVACand 1D UVAC in cutting brittle material silicon causes a much smaller cutting force, much lower vonMises stress at the subsurface, larger material remove rate, lower compressive normal stress ##IMG##[http://ej.iop.org/images/2053-1591/6/6/065908/mrxab0ccbieqn1.gif] {${\sigma }_{xx}$} and ##IMG##[http://ej.iop.org/images/2053-1591...] {${\sigma }_{yy},$}
materials science, multidisciplinary
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