Abstract:Single-molecule non-volatile memories can be designed as high-density memories and memristors. The latter, enabling real-time data processing by performing computations directly within the memory unit, holds the potential to surpass the limitations predicted by the Von Neumann architecture. This article provides an overview of the research progress on non-volatile memories associated with functional centers of single molecules. Single-molecule devices with bistable or even multistable switching characteristics have been used to achieve storage and memory resistance functions. This review aims to summarize strategies for achieving non-volatile resistance switching using single-molecule devices, including the design of functional molecules and device construction. It uncovers the physical and chemical mechanisms by which single-molecule non-volatile memories realize multistable conductance states, such as conformational transformations, tautomerisms, intramolecular motions, spin changes, and charge changes. Furthermore, it discusses the potential developments and challenges of single-molecule non-volatile memories, including the diversity in device construction, the challenges of device integration, and the possibility of achieving the high performance, while proposing potential solutions. The objective of this review is to provide readers with fresh research insights and avenues for further exploration, thereby introducing new perspectives in the field of single-molecule non-volatile memories. A single-molecule non-volatile memory is a crucial component of future nanoscale information storage. This article provides an overview of the design, mechanism and prospects of single-molecule non-volatile memories.

CHAPTER 17. Non-volatile Bipolar Transistor Memory

Non-volatile Bipolar Transistor Memory

Low-voltage Ultrafast Nonvolatile Memory Via Direct Charge Injection Through a Threshold Resistive-Switching Layer

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS2 Channels

Emerging Nonvolatile Memories to Go Beyond Scaling Limits of Conventional CMOS Nanodevices

New Floating Gate Memory with Excellent Retention Characteristics

Ambipolar Nonvolatile Memory Based on A Quantum-Dot Transistor with A Nanoscale Floating Gate

Investigation of Non-Volatile and Photoelectric Storage Characteristics for MoS2/h-BN/graphene Heterojunction Floating-Gate Transistor with the Different Tunneling Layer Thicknesses

Ambipolar Quantum-Dot-Based Low-Voltage Nonvolatile Memory with Double Floating Gates

A Semi-Floating Gate Memory Based on Van Der Waals Heterostructures for Quasi-Non-volatile Applications

Ultrafast Non-Volatile Floating-Gate Memory Based on All-2D Materials

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

Memory characteristics and mechanisms in transistor-based memories

Nanoparticle Floating-Gate Transistor Memory Based on Solution-Processed Ambipolar Organic Semiconductor

Nonvolatile Memory: New Floating Gate Memory with Excellent Retention Characteristics (Adv. Electron. Mater. 4/2019)

Flexible organic field-effect transistor nonvolatile memory enabling bipolar charge storage by small-molecule floating gate

Single-molecule Non-Volatile Memories: an Overview and Future Perspectives

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

Van Der Waals Materials-Based Floating Gate Memory for Neuromorphic Computing

A Nonvolatile Bipolar Optical Fiber Memory Based on Phase Change Materials

Flexible Multi-Level Quasi-Volatile Memory Based on Organic Vertical Transistor