Abstract:Organic thin film transistor (OTFT) based nonvolatile memory has made significant progress due to its biocompatibility, flexibility, and low cost, in which ferroelectric transistor memory and floating gate transistor memory play the main roles in organic nonvolatile transistor memory. Here, a novel layered hybrid structure OTFT nonvolatile memory is invented by combining ferroelectric poly(vinylidene fluoride‐co‐trifluoroethylene) P(VDF‐TrFE) with a floating gate layer utilizing CdSe/ZnS quantum dots (QDs), which integrates the advantages of ferroelectric memory and floating gate memory. The core–shell structured CdSe/Zns QDs are acted as robust charge trapping centers due to their band structure similar to a quantum well, preventing the back diffuse of trapped charges, while P(VDF‐TrFE) provides additional polarized electric field to modulate the capture of charge. The resultant devices exhibit high on‐state current (≈10−5 A), low off‐state current (≈10−10 A), excellent switch ratio (≈105), and retention characteristic (>104 s). Furthermore, a superior memory window, more than 85.6% of scanning voltage range, higher than most reported organic transistor memories, is achieved, which endows the device wide operating condition and significant discrimination between on and off state. The fine‐structured OTFT memory opens up a unique path for desirable memory to meet the growing demand of microelectronic industry.

Ambipolar Nonvolatile Memory Based on A Quantum-Dot Transistor with A Nanoscale Floating Gate

Ambipolar Quantum-Dot-Based Low-Voltage Nonvolatile Memory with Double Floating Gates

High-Performance Nonvolatile Organic Transistor Memory Using Quantum Dots-Based Floating Gate

Low-voltage All-Inorganic Perovskite Quantum Dot Transistor Memory

Low operating voltage ambipolar graphene oxide-floating-gate memory devices based on quantum dots

Non-volatile Bipolar Transistor Memory

A Semi-Floating Gate Memory Based on Van Der Waals Heterostructures for Quasi-Non-volatile Applications

Multilevel Storage and Photoinduced-Reset Memory by an Inorganic Perovskite Quantum-Dot/polystyrene Floating-Gate Organic Transistor

Nanoparticle Floating-Gate Transistor Memory Based on Solution-Processed Ambipolar Organic Semiconductor

CHAPTER 17. Non-volatile Bipolar Transistor Memory

Complementary of Ferroelectric and Floating Gate Structure for High Performance Organic Nonvolatile Memory

Ge/Si Double-Layer Quantum-Dots Floating-Gate Nano-Memory

An Ultrafast Quasi‐Non‐Volatile Semi‐Floating Gate Memory with Low‐Power Optoelectronic Memory Application

Nonvolatile Memory Effect in Organic Thin-Film Transistor Based on Aluminum Nanoparticle Floating Gate

Flexible organic field-effect transistor nonvolatile memory enabling bipolar charge storage by small-molecule floating gate

Organic Field-Effect Transistor Memory Device Based on an Integrated Carbon Quantum Dots/Polyvinyl Pyrrolidone Hybrid Nanolayer

Ge Quantum Dot Memory Realized with Vertical Si/SiGe Resonant Tunneling Structure

Light Enhanced Low-Voltage Nonvolatile Memory Based on All-Inorganic Perovskite Quantum Dots.

Ambipolar Charge Storage in Type‐I Core/Shell Semiconductor Quantum Dots toward Optoelectronic Transistor‐Based Memories

Organic Field-Effect Transistor Nonvolatile Memories Based on Hybrid Nano-Floating-Gate

Nonvolatile Photoelectric Memory with CsPbBr3 Quantum Dots Embedded in Poly(methyl Methacrylate) As Charge Trapping Layer