Abstract:Ion migration as well as electron transfer and coupling in resistive switching materials endow memristors with a physically tunable conductance to resemble synapses, neurons, and their networks. Four different types of volatile memristors and another four types of nonvolatile memristors are systemically surveyed in terms of the switching mechanisms and electrical properties that are the basis of different computing applications. The volatile memristor features spontaneous conductance decay after the cease of electrical/optical stimulations, which are closely related to the surface atom diffusion, metal–insulator–transition (including charge–density–wave), thermal spontaneous emission, and charge polarization. Such unique dynamic state evolution at the edge of chaos has enabled them to emulate certain synaptic and neural dynamics, leading to various applications ranging from spiking neural networks to combinatorial optimizations. Nonvolatile resistive switching behavior originated from the electron spins, ferroelectric polarization, crystalline‐amorphous transitions or interplay between ions and electrons enables the memristor array to implement the vector–matrix multiplication, which is the key convolutional operation in artificial neural networks. The progress, challenges, and opportunities for both volatile and nonvolatile memristor in the level of materials, integration technology, algorithm, and system are highlighted in this review. Four volatile memristors and four nonvolatile memristors in terms of the switching dynamics, application in neuromorphic computing, and architectures of memristor arrays are systemically summarized. The motivation of this review is to refine the conception of volatile and nonvolatile memristor, summarizes the important progress in hardware technology, and proposes the possible solutions in different level for memristor‐based neuromorphic computing.

Single-molecule Non-Volatile Memories: an Overview and Future Perspectives

Nonvolatile Multistates Memories for High-Density Data Storage

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS2 Channels

Organic molecular thin films for nanoscale information memory applications

Nonvolatile Multi-States Memories for High-Density Data Storage.

Small‐Molecule‐Based Organic Field‐Effect Transistor for Nonvolatile Memory and Artificial Synapse

Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing

Non-volatile Resistive Memory Devices Based on Solution-Processed Ultrathin Two-Dimensional Nanomaterials.

Emerging Nonvolatile Memories to Go Beyond Scaling Limits of Conventional CMOS Nanodevices

Non-volatile Bipolar Transistor Memory

Recent Advances in Organic‐based Materials for Resistive Memory Applications

Molecular Memory Based on Nanowire-Molecular Wire Heterostructures

Carbon nanomaterials for non-volatile memories

CHAPTER 17. Non-volatile Bipolar Transistor Memory

Multistate resistive switching behaviors for neuromorphic computing in memristor

Memristor Based on Inorganic and Organic Two-Dimensional Materials: Mechanisms, Performance, and Synaptic Applications

Ferroelectric Memory Based on Nanostructures

Novel Molecular Non-Volatile Memory: Application of Redox-Active Molecules

Novel photoelectroactive memories and neuromorphic devices based on nanomaterials

Recent Advances in Resistive Switching Materials and Devices: from Memories to Memristors

Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications