P‐13.9: Solution Processed High‐κ Lanthanum Oxide Dielectrics for Low Voltage Operations of Thin Film Transistor Applications

Qiyun Yua,Naiwei Tang,Weisheng Lai,Xubing Lu
DOI: https://doi.org/10.1002/sdtp.13714
2019-01-01
SID Symposium Digest of Technical Papers
Abstract:SID Symposium Digest of Technical PapersVolume 50, Issue S1 p. 979-980 Poster Session: P-13: OLEDs P-13.9: Solution Processed High-κ Lanthanum Oxide Dielectrics for Low Voltage Operations of Thin Film Transistor Applications Qiyun Yua, Qiyun Yua Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal University, Guangzhou, 510006 ChinaSearch for more papers by this authorNaiwei Tang, Naiwei Tang Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal University, Guangzhou, 510006 ChinaSearch for more papers by this authorWeisheng Lai, Weisheng Lai Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal University, Guangzhou, 510006 ChinaSearch for more papers by this authorXubing Lu, Xubing Lu luxubing@m.scnu.edu.cn Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal University, Guangzhou, 510006 ChinaSearch for more papers by this author Qiyun Yua, Qiyun Yua Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal University, Guangzhou, 510006 ChinaSearch for more papers by this authorNaiwei Tang, Naiwei Tang Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal University, Guangzhou, 510006 ChinaSearch for more papers by this authorWeisheng Lai, Weisheng Lai Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal University, Guangzhou, 510006 ChinaSearch for more papers by this authorXubing Lu, Xubing Lu luxubing@m.scnu.edu.cn Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal University, Guangzhou, 510006 ChinaSearch for more papers by this author First published: 04 October 2019 https://doi.org/10.1002/sdtp.13714AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat No abstract is available for this article. Volume50, IssueS1International Conference on Display Technology (ICDT 2019)September 2019Pages 979-980 RelatedInformation
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