Abstract:SID Symposium Digest of Technical PapersVolume 54, Issue S1 p. 848-848 Poster Session: P-11: Quantum Dots P-11.6: Efficient radiative recombination centers induced by trench defects in multiple-quantum wells of red InGaN light-emitting diodes Z.J. Pan, Z.J. Pan State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorZ.Z. Chen, Z.Z. Chen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871 Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808 Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, China, 226000Search for more papers by this authorY.Y. Chen, Y.Y. Chen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorJ.X. Nie, J.X. Nie State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorC.H. Deng, C.H. Deng State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorH.D. Zhang, H.D. Zhang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorB.Y. Dong, B.Y. Dong State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorX. Xin, X. Xin State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorW.H. Chen, W.H. Chen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorX.N. Kang, X.N. Kang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorZ.W. Liang, Z.W. Liang Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808Search for more papers by this authorQ. Wang, Q. Wang Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808Search for more papers by this authorG.Y. Zhang, G.Y. Zhang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871 Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808Search for more papers by this authorB. Shen, B. Shen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871 Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, China, 226000Search for more papers by this author Z.J. Pan, Z.J. Pan State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorZ.Z. Chen, Z.Z. Chen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871 Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808 Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, China, 226000Search for more papers by this authorY.Y. Chen, Y.Y. Chen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorJ.X. Nie, J.X. Nie State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorC.H. Deng, C.H. Deng State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorH.D. Zhang, H.D. Zhang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorB.Y. Dong, B.Y. Dong State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorX. Xin, X. Xin State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorW.H. Chen, W.H. Chen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorX.N. Kang, X.N. Kang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorZ.W. Liang, Z.W. Liang Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808Search for more papers by this authorQ. Wang, Q. Wang Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808Search for more papers by this authorG.Y. Zhang, G.Y. Zhang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871 Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808Search for more papers by this authorB. Shen, B. Shen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871 Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, China, 226000Search for more papers by this author First published: 03 August 2023 https://doi.org/10.1002/sdtp.16431AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat No abstract is available for this article. References 1 Koukitu, A.. et al Journal of Crystal Growth 170, 306-311 (1997) 2 Iida, D and Ohkawa, K. Semiconductor Science and Technology 37, 1 (2021) 3 Massabuau, F. C. P. et al Applied Physics Letters 101, 21(2012). 4 Bruckbauer, J. et al Applied Physics Letters, 98, 14(2011) Volume54, IssueS1International Conference on Display Technology 2023 (Volume 54, Issue S1)April 2023Pages 848-848 ReferencesRelatedInformation

3.2: <i>Invited Paper:</i> Rational Molecular Design and Refined Purity for Efficient Phosphorescent Materials and their Light Emitting Applications

P‐13.6: Design, Synthesis and OLEDs Application of a Novel Blue Phosphorescent Material with High Quantum Efficiency

Linear Carbene Metal Amides As a New Class of Emitters for Highly Efficient Solution-Processed and Vapor-Deposited OLEDs (conference Presentation)

12.2: Invited Paper: Efficient Organometallic Ir (III) Complex for Warm White Light‐emitting Diodes and Visible Light Communications

30.1: Invited Paper: Towards High‐Performance Solution‐Processed Light‐Emitting Didoes Based on Quantum Dots

Rational Design of Phosphorescent Iridium(iii) Complexes for Emission Color Tunability and Their Applications in OLEDs

23.1: Invited Paper: Device Physics and Material Chemistry of Quantum‐dot Light‐emitting Didoes

31.4: Phenyl‐Functionalized Pyridine: Modifiable Chromophore of [3+2+1] Ir(III) Phosphors

38.2: Invited Paper: A Sensitized Way Towards Stable Blue OLEDs

23.1: Invited Paper: High Efficiency and Stability of Ink‐jet Printed Quantum Dot Light Emitting Diodes Via Dual Ionic Surface Passivation

P‐13.1: Preparation, Photophysical Properties, and Device Performance of [3+2+1] Coordinated Iridium(III) Emitters

23.2: <i>Invited Paper:</i> Performance Boosting of Quantum Dots based LED via Atomic Layer Deposition

20.2: Invited Paper: DC/AC Three‐Terminal Organic Light‐Emitting Devices

Organic Crystals: Fabrication and Characterization of Organic Single Crystal‐Based Light‐Emitting Devices with Improved Contact Between the Metallic Electrodes and Crystal (adv. Funct. Mater. 45/2014)

A Fluorescein-Centered Polymer As a Phosphor for Fabricating Pure White Light-Emitting Diodes

Suppression of Efficiency Roll-off in Highly Efficient Blue Phosphorescent Organic Light-Emitting Devices Using Novel Iridium Phosphors with Good Electron Mobility

Highly Efficient Nondoped Green Organic Light-Emitting Diodes with Combination of High Photoluminescence and High Exciton Utilization

P‐11.6: Efficient Radiative Recombination Centers Induced by Trench Defects in Multiple‐quantum Wells of Red InGaN Light‐emitting Diodes

Molecular and Device Design Strategies for Ideal Performance White Organic Light-Emitting Diodes

Molecular Engineering Towards Efficient Aggregation‐Induced Delayed Fluorescence Luminogens as Emitters and Sensitizers for High‐Performance Organic Light‐Emitting Diodes

Rational Design of Aggregation-Induced Emission Luminogen with Weak Electron Donor-Acceptor Interaction to Achieve Highly Efficient Undoped Bilayer OLEDs.