201 Numerical Investigation on Cracking along the Cu/Si Interface with Nanoscale Stress Concentration by Cohesive Zone Model

Yabin YAN,Takashi SUMIGAWA,Fulin SHANG,Takayuki KITAMURA
DOI: https://doi.org/10.1299/jsmecmd.2011.24.17
2011-01-01
The Proceedings of The Computational Mechanics Conference
Abstract:Experiments on crack initiation and propagation along the Cu/Si interface in multilayered films (Si/Cu/SiN) with different thicknesses of the Cu layer (20 and 200 nm) have been conducted by using a nano-cantilever and millimeter-sized four-point bend specimens. To examine the applicability of cohesive zone model (CZM) criterion for interfacial delamination along the Cu/Si interface in nanoscale stress concentration, an exponential type of CZM is utilized to simulate the observed delamination processes using the finite element method. After the CZM parameters for the Cu/Si interface are calibrated by an experiment, interface cracking in other experiments is predicted with obtained CZM parameters. This indicates that the CZM criterion is universally applicable for describing cracking along the interface regardless of specimen dimensions and film thickness which include the differences in plastic behavior and residual stress. The CZM criterion can also predict interfacial cracking along Cu/Si interfaces with different stress singularities.
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