Near-ultraviolet Lateral Photovoltaic Effect in Fe_3O_4/3C-SiC Schottky Junctions

Bingqian Song,Xianjie Wang,Bo Li,Lingli Zhang,Zhe Lv,Yu Zhang,Yang Wang,Jinke Tang,Ping Xu,Bingsheng Li,Yanqiang Yang,Yu Sui,Bo Song
DOI: https://doi.org/10.1364/oe.24.023755
IF: 3.8
2016-01-01
Optics Express
Abstract:In this paper, we report a sensitive lateral photovoltaic effect (LPE) in Fe3O4/3C-SiC Schottky junctions with a fast relaxation time at near-ultraviolet wavelengths. The rectifying behavior suggests that the large build-in electric field was formed in the Schottky junctions. This device has excellent position sensitivity as high as 67.8 mV mm-1 illuminated by a 405 nm laser. The optical relaxation time of the LPE is about 30 μs. The fast relaxation and high positional sensitivity of the LPE make the Fe3O4/3C-SiC junction a promising candidate for a wide range of ultraviolet/near-ultraviolet optoelectronic applications.
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