Fast and Sensitive Lateral Photovoltaic Effects in Fe3o4/Si Schottky Junction

Xianjie Wang,Bingqian Song,Mingxue Huo,Yunfei Song,Zhe Lv,Yu Zhang,Yang Wang,Yongli Song,Jiahong Wen,Yu Sui,Jinke Tang

DOI: https://doi.org/10.1039/c5ra11872g

IF: 4.036

2015-01-01

RSC Advances

Abstract:In this paper, we report the fast and sensitive lateral photovoltaic (LPE) effects in a Fe3O4/Si junction.

What problem does this paper attempt to address?

Enhanced Lateral Photovoltaic Effects in n-Si/SiO2/PEDOT:PSS Structures

Jingying Zhang,Kang Meng,Gang Ni

DOI: https://doi.org/10.3390/polym14071429

2022-03-31

Abstract:Organic/silicon hybrid structures have been extensively studied for the application of solar cells due to their high photoelectric conversion efficiency and simple fabrication process. However, studies of lateral photovoltaic effects (LPEs) in the devices are still scarce. Herein, the Si/SiO2/PEDOT:PSS devices were prepared by spin-coating, and showing the lateral photovoltage (LPV) sensitivity of 14.0 mV/mm at room temperature, which is higher than the control samples of Si/SiO2 (0.1 mV/mm) and Si/PEDOT:PSS (9.0 mV/mm) structures. With the decrease in temperature, the lateral photovoltage increases initially, and reaches a peak at around 210 K, then drops accordingly. The enhancement of LPE can be mainly ascribed to the formation of the p-n junction and the native oxide layer at the organic/inorganic interface.
Effect of Ag layer thickness on lateral photovoltaic mechanisms in Ag/p-Si structures

Xinyuan Dong,Diyuan Zheng

DOI: https://doi.org/10.1088/1402-4896/ad24b2

2024-02-01

Physica Scripta

Abstract:The lateral photovoltaic effect (LPE) has been widely employed in optoelectronic devices for its high sensitivity and broadband responsivity. Typically, the physical mechanism of LPE is based on Schottky junction or PN junction. In this article, we present experimental evidence for multiple lateral photovoltaic mechanisms in Ag/p-Si structures and demonstrate the dominant mechanism of LPE can be converted from surface states to the Schottky barrier or localized surface plasmon resonances (LSPRs) by tuning the Ag thickness. We believe this experimental result extends the knowledge into the underlying mechanisms of LPE and presents a wide range of possibilities for the further development of LPE-based photodetectors.

physics, multidisciplinary
Efficient Hot Electron Extraction in Ag-Cu/TiO<sub>2</sub> for High Performance Lateral Photovoltaic Effect

Xinyuan Dong,Diyuan Zheng,Jing Lu,Yiru Niu,Hui Wang

DOI: https://doi.org/10.1109/LED.2021.3106740

IF: 4.8157

2021-01-01

IEEE Electron Device Letters

Abstract:Plasmon-enhanced lateral photovoltaic effect (LPE) in metal-semiconductor Schottky junctions has been proposed as a fascinating alternative for position sensitive detectors (PSDs). The efficiency of plasmon-induced hot electron injection into semiconductors which affects by nanoparticle composition is an important parameter for surface plasmon based LPE. In this letter, we modified the d-band density of states (DOS) of Cu nanoparticles (NPs) by depositing Ag-Cu composite nanoparticles to improve the hot electron injection efficiency, and observed an enhanced LPE in TiO2/Ag-Cu NPs/Si structure. It exhibits better lateral photovoltage sensitivity than samples with Cu NPs and Ag NPs in the visible region, especially under 445 nm laser irradiation. These findings offer an effective avenue for facilitating the photoelectric conversion in LPE, while opening the door to the possibilities in high sensitivity LPE-based optoelectronic device applications.
Flexoelectric Engineering of Bulk Photovoltaic Photodetector

Junxi Yu,Boyuan Huang,Songjie Yang,Yuan Zhang,Yinxin Bai,Chunlin Song,Wenjie Ming,Wenyuan Liu,Junling Wang,Changjian Li,Qingyuan Wang,Jiangyu Li

DOI: https://doi.org/10.1021/acs.nanolett.4c01173

IF: 10.8

2024-05-16

Nano Letters

Abstract:The bulk photovoltaic effect (BPVE) offers an interesting approach to generate a steady photocurrent in a single-phase material under homogeneous illumination, and it has been extensively investigated in ferroelectrics exhibiting spontaneous polarization that breaks inversion symmetry. Flexoelectricity breaks inversion symmetry via a strain gradient in the otherwise nonpolar materials, enabling manipulation of ferroelectric order without an electric field. Combining these two effects, we...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Local‐Illuminated Ultrathin Silicon Nanomembranes with Photovoltaic Effect and Negative Transconductance

Ping Feng,Ingolf Moench,Gaoshan Huang,Stefan Harazim,Elliot J. Smith,Yongfeng Mei,Oliver G. Schmidt

DOI: https://doi.org/10.1002/adma.201000583

IF: 29.4

2010-01-01

Advanced Materials

Abstract:Ultrathin silicon nanomembranes (SiNMs) on insulators under local illumination reveal a gate-controlled photovoltaic effect and negative transconductance in Schottky transistors applying both homo-and heterocontacts. Tiny variations of Schottky barriers between source and drain contacts are responsible for the photovoltaic effect in ultrathin SiNMs and can be enhanced by gate voltage and/or contact design.
Lateral Photovoltaic Effect Co-Observed with Unipolar Resistive Switching Behavior in Cu-doped ZnO Film

Jing Lu,Zheng Li,Guilin Yin,Meiying Ge,Dannong He,Hui Wang

DOI: https://doi.org/10.1063/1.4896366

IF: 2.877

2014-01-01

Journal of Applied Physics

Abstract:Unipolar resistive switching (RS) behavior was first observed in Cu-doped ZnO film based on ZnO/SiO2/Si structure, which was a novel phenomenon as memory films grown on Si substrate usually showed a bipolar one. The results demonstrate Cu-doped ZnO a new candidate for memory material. By introducing an external electric-field before the sweeping process, we have verified that the RS behavior was a localized effect. The non-linear I-V character, which suggested a junction of the proposed Cu-doped ZnO/SiO2/Si structure, leads to the lateral photovoltaic effect (LPE) investigation. In photovoltaic mode, which is the simplest configuration, the position sensitivity of lateral photovoltage observed on Cu-doped ZnO film achieves 24.82 mV/mm and the nonlinearity is within 9.95%, indicating that Cu-doped ZnO could serve as a LPE material directly. The dual effects accommodate functions of detector and memristor in the same structure and make Cu-doped ZnO a competitive material for advanced multi-functional device.
Enhanced Photovoltaic and Piezo-photovoltaic Effects in Flexible Oxide Ferroelectric Film Directly Coated on Polyimide Substrate

Chang Gao,Weili Li,Lu Jing,Zhao Wang,Lei Shi,Jie Sheng,Lidong Wang,Yu Zhao,Weidong Fei

DOI: https://doi.org/10.1016/j.nanoen.2023.108839

IF: 17.6

2023-09-06

Nano Energy

Abstract:Flexible ferroelectric photovoltaic (FePV) films have drawn widespread attention. However, in addition to the low filling factor (FF) and large bandgap of ferroelectrics, the direct fabrication of oxide FePV film on polymer substrate is also a challenging research topic. Here, we demonstrate high-performance FePV devices can be obtained with partially crystallized Zn 0.92- x Cu x (Fe 0.04 Li 0.04 )O (ZCFLO) film directly coted on polyimide substrate utilizing a cheap and simple dip-coating method at low-temperature processing. By introducing the local ferroelectricity and the piezo-photovoltaic effect, enhanced carrier transportation is achieved in designed ferroelectric/amorphous nanostructures, and the photovoltaic performances of the ZCFLO devices are enhanced in broadened spectral range. Under the AM 1.5 G light and the tensile strain of 0.39%, the markedly improved FF (> 86%), large photoresponse (>15 mA/W), giant piezo-photovoltaic (PPV) tensor (~1.94 mA∙W -1 ∙GPa -1 ) and resulted high PCE (>2.9%) were obtained in flexible ZCFLO ( x =0.05) FePV devices. This work not only offers a cost-efficient pathway to design high-performance FePV devices but also further broadens the research scope of piezo-phototronics.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
In Situ Investigation of Interfacial Properties of Sb2Se3 Heterojunctions

Shuaicheng Lu,Honghe Ding,Jun Hu,Yuhao Liu,Junfa Zhu,Rokas Kondrotas,Chao Chen,Jiang Tang

DOI: https://doi.org/10.1063/5.0008879

IF: 4

2020-01-01

Applied Physics Letters

Abstract:Antimony selenide (Sb2Se3), emerging as a promising photovoltaic material, has achieved over 9% efficiency within only 6 years. Various kinds of buffer materials are employed for Sb2Se3 solar cells to construct heterojunctions with distinctive device performance. Herein, we introduce in situ high resolution photoemission spectroscopy (HRPES) to investigate the interfacial properties between Sb2Se3 and three types of widely adopted buffer layers: CdS, ZnO, and TiO2. HRPES results and theoretical thermodynamic calculations reveal that in the initial stage, the deposited Sb2Se3 reacts with buffer materials in terms of activity in the following order: CdS ≥ ZnO > TiO2. Distinct transition layers are formed at CdS/Sb2Se3 and ZnO/Sb2Se3 interfaces, whereas it is nearly absent at TiO2/Sb2Se3. Our results suggest that the CdS/Sb2Se3 heterojunction shows spike-like conduction band offsets (CBOs), whereas ZnO/Sb2Se3 demonstrates a cliff-like CBO, and TiO2/Sb2Se3 is almost flat. The transition layers and band alignments at the interface could be the reasons for the stability and performance of Sb2Se3 photovoltaic devices with different buffer materials. Our investigation deepens the understanding of Sb2Se3 heterojunction formation and can benefit further development of Sb2Se3 thin-film solar cells.
Enhancement of Near-Infrared Photovoltaic Response of Si/Au Schottky-Junction Structure by Band-Bending Approaches

Yanru Yang,Xiyuan Dai,Dan Shen,Li Wu,Liang Yu,Fengyang Ma,Kaixin Liu,Zhongyao Yan,Jian Sun,Ming Lu

DOI: https://doi.org/10.1002/pssa.202400563

2024-01-01

Abstract:A combined approach of band bending is employed to enhance the near-infrared (NIR) photovoltaic (PV) response of a Si/Au Schottky junction (SHJ) device. As a reference, the basic architecture of the SHJ device consists of textured n-Si and gold nanoparticles (Au NPs). Its photoelectric conversion efficiency at 1319 nm wavelength is 0.0302%. A series of band-bending approaches are then applied to the reference device in sequence, aiming to minimize the electric loss of the structure by strengthening built-in electric field. These approaches include introductions of an Al2O3 layer for front field passivation, a p+-Si layer to form a p+n-like junction at the front of the device and a SiO2 layer for rear field passivation. With these modifications, under 1319 nm illumination, the open-circuit voltage eventually increases by 14%, the short-circuit current increases by 18% and the photoelectric conversion efficiency of the device increases by 66% to reach 0.0501%. The results of this work propose a strategy to minimize the electric loss in an NIR PV device. A near-infrared silicon photovoltaic device based on Schottky junction is realized in this work. Aiming at minimizing the electric loss in the device, a series of band-bending approaches are sequentially applied to enhance the total built-in electric field. As a result, the photoelectric conversion efficiency of the structure increases by 66%.image (c) 2024 WILEY-VCH GmbH
Interfacial electric field optimization and co-catalyst free LaFeO3-based p-p-type homojunction for efficient PEC water splitting

Yanxin Li,Zhichao Hao,Ruikai Wang,Guangyao Wang,Haiyan Li,Can Li,Chenghui Xia,Bohua Dong,Lixin Cao

DOI: https://doi.org/10.1016/j.cej.2024.149797

IF: 15.1

2024-04-01

Chemical Engineering Journal

Abstract:LaFeO3 (LFO), a typical p-type semiconductor, is considered as a promising material for photoelectric conversion because of its flexible composition and structure. However, its severe photogenerated carrier recombination and surface reaction kinetic hysteresis greatly limit its application in photoelectrochemistry (PEC) water splitting. Here, for the first time, a LFO p-p-type homojunction (Cu-LFO/Ni-LFO) formed by Cu-doped LFO and Ni-doped LFO is reported. Experimental investigation and density functional theory (DFT) calculations reveal that Cu and Ni doping forms a built-in electric field directed from Ni-LFO to Cu-LFO, which effectively improves the carrier separation and transport efficiency. The comparable crystal structure at the interface minimizes the photogenerated carrier recombination due to the interface lattice mismatch. In addition, Ni-LFO in contact with the electrolyte served as a co-catalyst like role in this PEC system, improving the kinetic properties of the surface reaction significantly by optimizing the adsorption and desorption of H2O molecules and HER reaction intermediates on the Fe in the active center whilst significantly reducing the energy barrier. As a result, the photocurrent density of the Cu-LFO/Ni-LFO photocathode reaches 5.94 mA cm2, which is 11 times higher than that of Cu-LFO and surpasses all LFO-based photocathodes reported so far. The LFO-based p-p homo-junction synthesized in this work is instructive for improving the carrier separation efficiency and surface reaction kinetics of LFO.

engineering, chemical, environmental
Giant Lateral Photovoltaic Effect in Ag/Porous Silicon/Si Structure for High-performance Near-Infrared Detection

Su Hu,Peng Bao,Yuhong Cao,Zhuyikang Zhao,Ke Chang,Nan Su,Kang’an Jiang,Xinhui Zhao,Hui Wang

DOI: https://doi.org/10.1016/j.nanoen.2023.109167

IF: 17.6

2023-12-08

Nano Energy

Abstract:The lateral photovoltaic effect demonstrates versatility across various applications, including photodetectors, imaging, spectroscopy, biosensing, and environmental monitoring. Challenges arise from the low energy of near-infrared photons, regarded as a bottleneck for high-sensitivity photodetector development in this spectrum, limiting applications like optical fiber communication and image sensors. However, this study achieved a remarkable 720.57 mV/mm sensitivity for the lateral photovoltaic effect in the near-infrared region with a 980 nm laser irradiation on an Ag/Porous Silicon/Si structure. This sensitivity surpasses previous observations several to hundreds of times and even outperforms many other structures in the short-wavelength spectrum, further emphasizing its significance in this field. The use of a unique fluoro-amino electrolysis technique ensures consistent porosity, mitigating the adverse effects of photoluminescence. Combined with surface Ag, it induces local surface plasmon resonance and efficient plasmon coupling, markedly increasing electron density. This highly sensitive structure propels advancements in near-infrared photodetectors and Raman signal enhancement, establishing a robust foundation for potential applications in highly sensitive photodetectors and biological sensors.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Electric-field modulated photovoltaic effect of ferroelectric double-perovskite Bi 2 FeMnO 6 films

Jianjun Lin,Peng Shen,Yuan Liu,Fangyu Yue,Ye Chen,Zhiyong Zhou,Pingxiong Yang,Junhao Chu,Chun-Gang Duan,Lin Sun

DOI: https://doi.org/10.1063/5.0059637

IF: 4

2021-09-06

Applied Physics Letters

Abstract:Ferroelectric perovskite oxide materials for photovoltaics (PV) have received considerable attention for their switchable PV responses and above-bandgap photovoltages as a type of new-generation PV device. Relatively large bandgap and low photocurrent remain major problems for their PV applications. Herein, we report the PV response of ferroelectric double-perovskite Bi2FeMnO6 (BFMO) thin films. It was found that the photocurrent density (Jsc) of a Sn:In2O3 (ITO)/BFMO/SrRuO3 (SRO) thin film device is two orders of magnitude higher than that of BiFeO3, and its power conversion efficiency is about 430 times larger than that of BiFeO3 under AM 1.5G illumination. The built-in electric field near the BFMO/SRO interface, which represents the Schottky contact, leads to the separation of photon-generated carriers. More importantly, the electric poling treatment on the BFMO device can manipulate significantly the magnitude of Jsc, which is independent of the polarization direction. This electric-field modulated PV effect in the poled BFMO device originates from the modulation of the Schottky barrier height at the BFMO/SRO interface. The redistribution of oxygen vacancies after electric poling treatment is mainly responsible for the modulation of the Schottky barrier height.

physics, applied
Recent Progress on Localized-Field Enhanced Few-Layer MoS2 Photodetector

Weida Hu,Wenjin Luo,Peng Wang,Jinshui Miao,Xiaoshuang Chen,Wei Lu

DOI: https://doi.org/10.1364/pfe.2015.pt3e.2

2015-01-01

Abstract:MoS2 is a promising candidate material for high speed optoelectronic devices, but with low photoresponsivity. Recently, we reported a large enhancement of photocurrent response by coupling few-layer MoS2 with Au nanoparticles or periodic Au nanoarrays[1].
Plasmon-enhanced lateral photovoltaic effect observed in Ag-ZnO core-shell nanoparticles

Xinyuan Dong,Diyuan Zheng,Jing Lu,Yiru Niu,Binbin Liu,Hui Wang

DOI: https://doi.org/10.1063/5.0044981

IF: 4

2021-01-01

Applied Physics Letters

Abstract:The lateral photovoltaic effect (LPE) is widely used in sensitive position detectors. Discovering comprehensive mechanisms and continuously improving their sensitivity are the ongoing goals in this field. However, the limited absorption and rapid recombination are two major challenges in the traditional LPE. Here, surface plasmon-based approaches have been used to boost the energy conversion efficiency, and the Ag-ZnO core-shell nanoparticles (NPs) with enhanced LPE are prepared on the Si substrate through atomic layer deposition. Owing to the enhanced light absorption, prolonged hot electron generation, and plasmon-induced charge separation, this system exhibits good LPE performance with a maximum sensitivity of 122.1 mV / mm at 980nm, which is about seven times larger than that observed in conventional Ag/Si (5.03 mV / mm) and ZnO/Si (76.13 mV / mm). Besides, its sensitivity can increase up to 114.7% by using rapid thermal annealing to change the shape and size of active plasmon Ag NPs. Furthermore, the surface-enhanced Raman scattering spectra and finite-difference time-domain electric field simulation prove the occurrence of localized surfaced plasmon resonance excitation. This infrared sensitive shell-isolated structure has great potential for applications in high sensitivity and stability photoelectric devices.
Photovoltaic Effect of A-C: Fe/AlOx/Si Based Heterostructures

Wu Li-Hua,Zhang Xiao-Zhong,Yu Yi,Wan Cai-Hua,Tan Xin-Yu

DOI: https://doi.org/10.7498/aps.60.037807

IF: 0.906

2011-01-01

Acta Physica Sinica

Abstract:The photovoltaic effect of a-C: Fe/AlOx/Si based heterostructures prepared by Pulsed Laser Deposition (PLD) and its applications for solar cells were investigated. Thin alumina layer with a thickness of ~2nm was introduced to the interface between carbon and silicon, and the photovoltatic properties, such as open circuit voltage of ~0.33 V and short current density of ~4.5 mA/cm2, were improved dramatically compared with the samples without the insulation alumina layer. This may be related to the improvement of interface quality, where there are lower recombination centers such as defects and traps, which are approved by the C-V measurement. This work may shed light on the carbon/silicon based solar cells.
Monolayer Graphene Film/Silicon Nanowire Array Schottky Junction Solar Cells

Chao Xie,Peng Lv,Biao Nie,Jiansheng Jie,Xiwei Zhang,Zhi Wang,Peng Jiang,ZhiZhong Hu,Linbao Luo,ZhiFeng Zhu,Li Wang,Chunyan Wu

DOI: https://doi.org/10.1063/1.3643473

IF: 4

2011-01-01

Applied Physics Letters

Abstract:Schottky junction solar cells were constructed by combining the monolayer graphene (MLG) films and the Si nanowire (SiNW) arrays. Pronounced photovoltaic characteristics were investigated for devices with both p-MLG/n-SiNWs and n-MLG/p-SiNWs structures. Due to the balance between light absorption and surface carrier recombination, devices made of SiNW arrays with a medium length showed better performance and could be further improved by enhancing the MLG conductivity via appropriate surface treatment or doping. Eventually, a photoconversion efficiency up to 2.15% is obtained by the means of filling the interspace of SiNW array with graphene suspension. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3643473]
A synergetic application of surface plasmon and field effect to improve Si solar cell performance.

Zhi-Quan Zhou,Liang-Xing Wang,Wei Shi,Shu-Lin Sun,Ming Lu

DOI: https://doi.org/10.1088/0957-4484/27/14/145203

IF: 3.5

2016-01-01

Nanotechnology

Abstract:We report a synergetic application of surface plasmon (SP) and field effect (FE) to improve crystalline Si solar cell performance. The SPs are supported by small-sized Ag nanoparticles with an average diameter of 36.7 nm. The localized SP electromagnetic field from Ag nanoparticles excites extra electron-hole pairs at the surface region of the Si solar cell emitter, and meanwhile, the electron-hole pairs are detached by the electrostatic field that crosses the emitter surface. This synergism of SP and FE produces extra charges and enhances the Si solar cell efficiency. As compared to a Si solar cell applying SP and FE independently, a more than 10% efficiency enhancement is achieved by using them synergistically.
Modeling and simulation of Si/PEDOT:PSS planar heterojunction photovoltaics by finite element method

W.Q. Chen,Manxi Wang,Xiaofan Yang,Wen-Yan Yin,Er-Ping Li

DOI: https://doi.org/10.1109/edaps.2017.8276983

2017-01-01

Abstract:Modeling and simulation of Si/PEDOT:PSS planar heterojunction solar cell is performed by using the finite element method to solve Poisson equation, drift-diffusion equations and current continuity equations. PEDOT:PSS is a hole-rich organic semiconductor, which can be treated as highly p-type doped semiconductor. While, the 2 mu m silicon thin film is n-type doped. The Si/PEDOT:PSS heterojunction behaves like a pn junction rather than a Schottky junction as clarified in previous study and the PEDOT : PSS is much highly doped, the hole diffusion current in Si is the dominant current component. The simulated J-V characteristics of the Si/PEDOT:PSS planar heterojunction are obtained and compared with experiments.
Arising applications of ferroelectric materials in photovoltaic devices

Yongbo Yuan,Zhengguo Xiao,Bin Yang,Jinsong Huang

DOI: https://doi.org/10.1039/c3ta14188h

2014-01-01

J. Mater. Chem. A

Abstract:The ferroelectric-photovoltaic (FE-PV) device, in which a homogeneous ferroelectric material is used as a light absorbing layer, has been investigated during the past several decades with numerous ferroelectric oxides. The FE-PV effect is distinctly different from the typical photovoltaic (PV) effect in semiconductor p–n junctions in that the polarization electric field is the driving force for the photocurrent in FE-PV devices. In addition, the anomalous photovoltaic effect, in which the voltage output along the polarization direction can be significantly larger than the bandgap of the ferroelectric materials, has been frequently observed in FE-PV devices. However, a big challenge faced by the FE-PV devices is the very low photocurrent output. The research interest in FE-PV devices has been re-spurred by the recent discovery of above-bandgap photovoltage in materials with ferroelectric domain walls, electric switchable diodes and photovoltaic effects, tip-enhanced photovoltaic effects at the nanoscale, and new low-bandgap ferroelectric materials and device design. In this feature article, we reviewed the advance in understanding the mechanisms of the ferroelectric photovoltaic effects and recent progress in improving the photovoltaic device performance, including the emerging approaches of integrating the ferroelectric materials into organic heterojunction photovoltaic devices for very high efficiency PV devices.
Effective Passivation and Tunneling Hybrid a-SiOx(In) Layer in ITO/n-Si Heterojunction Photovoltaic Device

Ming Gao,Yazhou Wan,Yong Li,Baichao Han,Wenlei Song,Fei Xu,Lei Zhao,Zhongquan Ma

DOI: https://doi.org/10.1021/acsami.7b01447

2017-05-24

Abstract:In this article, using controllable magnetron sputtering of indium tin oxide (ITO) materials on single crystal silicon at 100 °C, the optoelectronic heterojunction frame of ITO/a-SiOx(In)/n-Si is simply fabricated for the purpose of realizing passivation contact and hole tunneling. It is found that the gradation profile of indium (In) element together with silicon oxide (SiOx/In) within the ultrathin boundary zone between ITO and n-Si occurs and is characterized by X-ray photoelectron spectroscopy with the ion milling technique. The atomistic morphology and physical phase of the interfacial layer has been observed with a high-resolution transmission electron microscope. X-ray diffraction, Hall effect measurement, and optical transmittance with Tauc plot have been applied to the microstructure and property analyses of ITO thin films, respectively. The polycrystalline and amorphous phases have been verified for ITO films and SiOx(In) hybrid layer, respectively. For the quantum transport, both direct and defect-assisted tunneling of photogenerated holes through the a-SiOx(In) layer is confirmed. Besides, there is a gap state correlative to the indium composition and located at Ev + 4.60 eV in the ternary hybrid a-SiOx(In) layer that is predicted by density functional theory of first-principles calculation, which acts as an "extended delocalized state" for direct tunneling of the photogenerated holes. The reasonable built-in potential (Vbi = 0.66 V) and optimally controlled ternary hybrid a-SiOx(In) layer (about 1.4 nm) result in that the device exhibits excellent PV performance, with an open-circuit voltage of 0.540 V, a short-circuit current density of 30.5 mA/cm2, a high fill factor of 74.2%, and a conversion efficiency of 12.2%, under the AM 1.5 illumination. The work function difference between ITO (5.06 eV) and n-Si (4.31 eV) is determined by ultraviolet photoemission spectroscopy and ascribed to the essence of the built-in-field of the PV device. In addition, the strong inversion layer in the surface of the n-Si substrate is tentatively correlated to the a-SiOx(In) interface layer as well.

Fast and Sensitive Lateral Photovoltaic Effects in Fe3o4/Si Schottky Junction

Enhanced Lateral Photovoltaic Effects in n-Si/SiO2/PEDOT:PSS Structures

Effect of Ag layer thickness on lateral photovoltaic mechanisms in Ag/p-Si structures

Efficient Hot Electron Extraction in Ag-Cu/TiO<sub>2</sub> for High Performance Lateral Photovoltaic Effect

Flexoelectric Engineering of Bulk Photovoltaic Photodetector

Local‐Illuminated Ultrathin Silicon Nanomembranes with Photovoltaic Effect and Negative Transconductance

Lateral Photovoltaic Effect Co-Observed with Unipolar Resistive Switching Behavior in Cu-doped ZnO Film

Enhanced Photovoltaic and Piezo-photovoltaic Effects in Flexible Oxide Ferroelectric Film Directly Coated on Polyimide Substrate

In Situ Investigation of Interfacial Properties of Sb2Se3 Heterojunctions

Enhancement of Near-Infrared Photovoltaic Response of Si/Au Schottky-Junction Structure by Band-Bending Approaches

Interfacial electric field optimization and co-catalyst free LaFeO3-based p-p-type homojunction for efficient PEC water splitting

Giant Lateral Photovoltaic Effect in Ag/Porous Silicon/Si Structure for High-performance Near-Infrared Detection

Electric-field modulated photovoltaic effect of ferroelectric double-perovskite Bi 2 FeMnO 6 films

Recent Progress on Localized-Field Enhanced Few-Layer MoS2 Photodetector

Plasmon-enhanced lateral photovoltaic effect observed in Ag-ZnO core-shell nanoparticles

Photovoltaic Effect of A-C: Fe/AlOx/Si Based Heterostructures

Monolayer Graphene Film/Silicon Nanowire Array Schottky Junction Solar Cells

A synergetic application of surface plasmon and field effect to improve Si solar cell performance.

Modeling and simulation of Si/PEDOT:PSS planar heterojunction photovoltaics by finite element method

Arising applications of ferroelectric materials in photovoltaic devices

Effective Passivation and Tunneling Hybrid a-SiOx(In) Layer in ITO/n-Si Heterojunction Photovoltaic Device