Large Lateral Photovoltaic Effect with Ultrafast Relaxation Time in Snse/Si Junction

Xianjie Wang,Xiaofeng Zhao,Chang Hu,Yang Zhang,Bingqian Song,Lingli Zhang,Weilong Liu,Zhe Lv,Yu Zhang,Jinke Tang,Yu Sui,Bo Song

DOI: https://doi.org/10.1063/1.4955480

IF: 4

2016-01-01

Applied Physics Letters

Abstract:In this paper, we report a large lateral photovoltaic effect (LPE) with ultrafast relaxation time in SnSe/p-Si junctions. The LPE shows a linear dependence on the position of the laser spot, and the position sensitivity is as high as 250 mV mm−1. The optical response time and the relaxation time of the LPE are about 100 ns and 2 μs, respectively. The current-voltage curve on the surface of the SnSe film indicates the formation of an inversion layer at the SnSe/p-Si interface. Our results clearly suggest that most of the excited-electrons diffuse laterally in the inversion layer at the SnSe/p-Si interface, which results in a large LPE with ultrafast relaxation time. The high positional sensitivity and ultrafast relaxation time of the LPE make the SnSe/p-Si junction a promising candidate for a wide range of optoelectronic applications.