Integration of Oxide Semiconductor Thin Films with Relaxor-based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties.
Zhi-Xue Xu,Jian-Min Yan,Meng Xu,Lei Guo,Ting-Wei Chen,Guan-Yin Gao,Si-Ning Dong,Ming Zheng,Jin-Xing Zhang,Yu Wang,Xiao-Guang Li,Hao-Su Luo,Ren-Kui Zheng
DOI: https://doi.org/10.1021/acsami.8b09170
IF: 9.5
2018-01-01
ACS Applied Materials & Interfaces
Abstract:We report the fabrication of 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-0.29PT)-based ferroelectric field effect transistors (FeFET) by the epitaxial growth of cobalt-doped tin dioxide (SnO2) semiconductor thin films on the PMN-0.29PT single crystals. Using such FeFETs we realized in situ, reversible, and nonvolatile manipulation of the electron carrier density and achieved a large nonvolatile modulation of the resistance (∽330%) of the SnO2:Co films through the polarization switching of the PMN-0.29PT at room temperature. Particularly, combining the ferroelectric gating with the piezoresponse force microscopy, x-ray diffraction, Hall effect, and magnetoresistance (MR), we rigorously disclose that both the sign and the magnitude of the MR is intrinsically determined by the electron carrier density which could modify the s-d exchange interaction of the SnO2:Co films. Furthermore, we realized multilevel resistance states of the SnO2:Co films by combining the ferroelectric gating with the ultraviolet light illumination, demonstrating that the FeFETs have potential applications in multistate resistive memories and electro-optical devices.