Abstract:In recent years, wide-bandgap devices (WBG) such as silicon carbide (SiC) and gallium nitride (GaN) transistors have drawn significant research attention in power conversion applications where higher efficiency, higher power density and lower cost are required, for example, in electric vehicle (EV) applications. Owing to its better figures of merit on on-resistance, switching speed and junction temperature, enhancement-mode GaN high electron mobility transistors (HEMTs) are able to be operated with switching frequency up to the megahertz range, through which the size of passive components in the power converters can be significantly reduced. Consequently, the power converter’s integration level and power density can be increased. In GaN-based power converters, the switching energy loss increases naturally along with the switching frequency, which is the dominant loss component. Consequently, it is always one of the top priority performances to be considered in research and development activities. For device manufacturers, with access to internal materials and dimensional parameters, physics-based device models are usually used. Although these models can reveal detailed characteristics of the devices, they are not accessible to the public and can be very time-consuming to develop. Analytical models, that can emulate the transistor’s dynamic behaviour and predict the switching energy loss without consuming too much computing resources, are always an essential tool to help provide guidelines to engineers for circuit design and performance optimization purposes. This thesis develops a computationally inexpensive and straightforward switching transient model which proves to be more accurate than conventional model through simulation and experiments. Currently, in the commercial market, there are only a few mature designs of GaN three-phase inverter products, and most of them are costly. This unavoidable phenomenon is led by the fact that the gate driver and power loop design for GaN is demanding. Some companies such as EPC, Navitas and Power Integrations are committed to monolithic-integrated gate drivers, but they are complex and expensive. Thus, this thesis also aims to design a GaN-based three-phase inverter with low cost and low complexity in the gate drive circuit. In addition, to achieve high performance GaN-based inverter, parasitic components in the power loop have to be minimized. In this thesis study, parasitic parameters of the power loop are extracted through Ansys Q3D simulation and then validated through experimental test results. With accurate parasitic parameters, the layout of the PCBs is improved to achieve better inverter performance.

Evaluating Switching Performance of GaN HEMT Using Analytical Modeling

An Improved Analytical Model of GaN HEMT in Cascode Configuration During Turn-on Transition

An Accurate Switching Transient Analytical Model for GaN HEMT under the Influence of Nonlinear Parameters

Prediction of overshoot and crosstalk of low‐voltage GaN HEMT using analytical model

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

Analytical Loss Model of Low Voltage Enhancement Mode GaN HEMTs

A New Extraction Method of GaN Switch-Hemt Small-Signal Model with Capacitance Scanning Algorithm

An Analytical Switching Process Model of Low-Voltage Egan HEMTs for Loss Calculation

A Normalized Quantitative Method for GaN HEMT Turn-ON Overvoltage Modeling and Suppressing

Switching Transition Modeling of eGaN HEMT in Power Converters

A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs

Hard-Switching Loss Calculation Model For Fast-Switching GaN HEMT in Half-Bridge Circuit

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

Virtual Prototype and GaN HEMT Based High Frequency LLC Converter Design

An Accurate Datasheet-Based Full-Characteristics Analytical Model of GaN HEMTs for Deadtime Optimization

Design and Improved Switching Transient Modeling for A GaN-based Three Phase Inverter

An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices

A Postprocessing-Technique-Based Switching Loss Estimation Method for GaN Devices

Analytical Switching Loss Model for GaN-Based Control Switch and Synchronous Rectifier in Low-Voltage Buck Converters

Performance Evaluation of 40-V/10-A GaN HEMT Versus Si MOSFET for Low-Voltage Buck Converter Application

Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review