Abstract:In recent years, wide-bandgap devices (WBG) such as silicon carbide (SiC) and gallium nitride (GaN) transistors have drawn significant research attention in power conversion applications where higher efficiency, higher power density and lower cost are required, for example, in electric vehicle (EV) applications. Owing to its better figures of merit on on-resistance, switching speed and junction temperature, enhancement-mode GaN high electron mobility transistors (HEMTs) are able to be operated with switching frequency up to the megahertz range, through which the size of passive components in the power converters can be significantly reduced. Consequently, the power converter’s integration level and power density can be increased. In GaN-based power converters, the switching energy loss increases naturally along with the switching frequency, which is the dominant loss component. Consequently, it is always one of the top priority performances to be considered in research and development activities. For device manufacturers, with access to internal materials and dimensional parameters, physics-based device models are usually used. Although these models can reveal detailed characteristics of the devices, they are not accessible to the public and can be very time-consuming to develop. Analytical models, that can emulate the transistor’s dynamic behaviour and predict the switching energy loss without consuming too much computing resources, are always an essential tool to help provide guidelines to engineers for circuit design and performance optimization purposes. This thesis develops a computationally inexpensive and straightforward switching transient model which proves to be more accurate than conventional model through simulation and experiments. Currently, in the commercial market, there are only a few mature designs of GaN three-phase inverter products, and most of them are costly. This unavoidable phenomenon is led by the fact that the gate driver and power loop design for GaN is demanding. Some companies such as EPC, Navitas and Power Integrations are committed to monolithic-integrated gate drivers, but they are complex and expensive. Thus, this thesis also aims to design a GaN-based three-phase inverter with low cost and low complexity in the gate drive circuit. In addition, to achieve high performance GaN-based inverter, parasitic components in the power loop have to be minimized. In this thesis study, parasitic parameters of the power loop are extracted through Ansys Q3D simulation and then validated through experimental test results. With accurate parasitic parameters, the layout of the PCBs is improved to achieve better inverter performance.

Hard-Switching Loss Calculation Model For Fast-Switching GaN HEMT in Half-Bridge Circuit

An Improved Analytical Model of GaN HEMT in Cascode Configuration During Turn-on Transition

A Postprocessing-Technique-Based Switching Loss Estimation Method for GaN Devices

A New Extraction Method of GaN Switch-Hemt Small-Signal Model with Capacitance Scanning Algorithm

An Improved Analytical IGBT Model for Loss Calculation Including Junction Temperature and Stray Inductance

Improved Switching Loss Calculation in Neutral Point Clamped Inverter Via Waveforms Linearization

A Normalized Quantitative Method for GaN HEMT Turn-ON Overvoltage Modeling and Suppressing

An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices

A Loss Measurement Approach of Power Magnetic Components under Practical Power Electronics Conditions

A Unified Switch Loss Model and Design Consideration for Multilevel Boost PFC with GaN Devices

Virtual Prototype and GaN HEMT Based High Frequency LLC Converter Design

Switching Transition Modeling of eGaN HEMT in Power Converters

GaN Power Transistor Modeling for High-Speed Converter Circuit Design

Factors and Considerations for Modeling Loss of a GaN-based Inverter

An Accurate Datasheet-Based Full-Characteristics Analytical Model of GaN HEMTs for Deadtime Optimization

Analytical Methodology for Loss Calculation of SiC MOSFETs

Design and Improved Switching Transient Modeling for A GaN-based Three Phase Inverter

Modelling and quantification of power losses due to dynamic on-state resistance of GaN E-mode HEMT

Accurate conduction and switching loss models of IGBTs for resonant converter design

Systematic Derivation and Experimental Verification of a Compact Loss Model for Soft-switching Half-bridges

A Generic Power Loss Calculation Method for Fast Converter Performance Scanning