Abstract:In recent years, wide-bandgap devices (WBG) such as silicon carbide (SiC) and gallium nitride (GaN) transistors have drawn significant research attention in power conversion applications where higher efficiency, higher power density and lower cost are required, for example, in electric vehicle (EV) applications. Owing to its better figures of merit on on-resistance, switching speed and junction temperature, enhancement-mode GaN high electron mobility transistors (HEMTs) are able to be operated with switching frequency up to the megahertz range, through which the size of passive components in the power converters can be significantly reduced. Consequently, the power converter’s integration level and power density can be increased. In GaN-based power converters, the switching energy loss increases naturally along with the switching frequency, which is the dominant loss component. Consequently, it is always one of the top priority performances to be considered in research and development activities. For device manufacturers, with access to internal materials and dimensional parameters, physics-based device models are usually used. Although these models can reveal detailed characteristics of the devices, they are not accessible to the public and can be very time-consuming to develop. Analytical models, that can emulate the transistor’s dynamic behaviour and predict the switching energy loss without consuming too much computing resources, are always an essential tool to help provide guidelines to engineers for circuit design and performance optimization purposes. This thesis develops a computationally inexpensive and straightforward switching transient model which proves to be more accurate than conventional model through simulation and experiments. Currently, in the commercial market, there are only a few mature designs of GaN three-phase inverter products, and most of them are costly. This unavoidable phenomenon is led by the fact that the gate driver and power loop design for GaN is demanding. Some companies such as EPC, Navitas and Power Integrations are committed to monolithic-integrated gate drivers, but they are complex and expensive. Thus, this thesis also aims to design a GaN-based three-phase inverter with low cost and low complexity in the gate drive circuit. In addition, to achieve high performance GaN-based inverter, parasitic components in the power loop have to be minimized. In this thesis study, parasitic parameters of the power loop are extracted through Ansys Q3D simulation and then validated through experimental test results. With accurate parasitic parameters, the layout of the PCBs is improved to achieve better inverter performance.

GaN Power Transistor Modeling for High-Speed Converter Circuit Design

A 2–10 MHz GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping and Dual Level Shifters for Automotive Applications

An Improved Analytical Model of GaN HEMT in Cascode Configuration During Turn-on Transition

Evaluation of Power Losses in Different CCM Mode Single-Phase Boost PFC Converters Via a Simulation Tool

Design and Improved Switching Transient Modeling for A GaN-based Three Phase Inverter

Thermal modeling, analysis, and management of high-power GaN transistors

Virtual Prototype and GaN HEMT Based High Frequency LLC Converter Design

Transient Modelling of Loss and Thermal Dynamics in Power Semiconductor Devices

Factors and Considerations for Modeling Loss of a GaN-based Inverter

Hard-Switching Loss Calculation Model For Fast-Switching GaN HEMT in Half-Bridge Circuit

An Accurate Datasheet-Based Full-Characteristics Analytical Model of GaN HEMTs for Deadtime Optimization

Switching Transition Modeling of eGaN HEMT in Power Converters

Analysis of MHz 380V-12V DCX with Low FoM Device

A Unified Switch Loss Model and Design Consideration for Multilevel Boost PFC with GaN Devices

Accurate Evaluation of Commutations of 650 V GaN Power Switches Assisted by Electromagnetic Simulations in a 7 kW Dual Active Bridge Converter for Automotive Battery Charging Applications

Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review

A Generic Power Loss Calculation Method for Fast Converter Performance Scanning

Accurate conduction and switching loss models of IGBTs for resonant converter design

An Improved GHA-enabled Steady State Model-derived Semiconductor Loss Optimization for a Three-port C3L3 Resonant Converter

Nonsegmented PSpice Circuit Model of GaN HEMT with Simulation Convergence Consideration

Modeling the Gate Driver IC for GaN Transistor: A Black-Box Approach