Abstract:Gallium nitride (GaN) high-electron-mobility transistor (HEMT) has the advantages of high switching speed and low ON-resistance, which make it widely used in high-frequency applications to realize high power density. Triangular current mode (TCM) modulation has been used in GaN-based converters to simultaneously achieve high power density and high efficiency through full-range zero voltage switching (ZVS). However, as switching frequency increases, the effect of dead time becomes more significant. Meanwhile, because of the junction capacitors of GaN HEMTs, the optimum dead time changes greatly with the turn-off current. Inappropriate dead time will induce extra loss that goes against the further improvement of power density. In order to minimize the dead-time loss in GaN HEMT-based TCM converter, this article proposes a strategy of adaptive dead-time control. An accurate turn-off transient model is proposed to calculate optimal dead time with consideration of the nonlinear capacitors. Based on this model, a loss model is established to evaluate the effect of dead time involving the short circuit in dead time. A new method of drive signal generation in TCM is proposed to increase the accuracy of dead-time control and reduce the current ripple. By reusing the detection signal in TCM, the adaptive dead-time control is realized without extra sensors. The proposed model is verified by a dual-pulse test, which shows the maximum error between the calculated and the experimental turn-off time is below 3 ns. The proposed adaptive dead-time control is implemented in a GaN HEMT-based boost converter. The experimental results show that the adaptive dead-time control can improve the efficiency over all operation conditions compared with using the fixed dead time, and the total loss is reduced by 26.7% at 800-W load and 70.8% at 50-W load.

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An Improved Analytical Model of GaN HEMT in Cascode Configuration During Turn-on Transition

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A Normalized Quantitative Method for GaN HEMT Turn-ON Overvoltage Modeling and Suppressing

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

A New Extraction Method of GaN Switch-Hemt Small-Signal Model with Capacitance Scanning Algorithm

An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices

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Hard-Switching Loss Calculation Model For Fast-Switching GaN HEMT in Half-Bridge Circuit

An Improved Nonlinear I‐V Model for GaN HEMTs

Switching Transient Analysis for Normally-off GaN Transistors with P-Gan Gate in a Phase-Leg Circuit

A High Efficiency Model-Based Adaptive Dead-Time Control Method for GaN HEMTs Considering Nonlinear Junction Capacitors in Triangular Current Mode Operation

Analysis and Suppression of High Speed Dv/Dt Induced False Turn-on in GaN HEMT Phase-Leg Topology

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A Physics-Based Compact Direct-Current and Alternating-Current Model for AlGaN/GaN High Electron Mobility Transistors

A novel small-signal equivalent circuit model for GaN HEMTs incorporating a dual-field-plate

Nonsegmented PSpice Circuit Model of GaN HEMT with Simulation Convergence Consideration

A Physics-Based Empirical Model of Dynamic I OFF under Switching Operation in P -Gan Gate Power HEMTs

An ASM-Based Semiempirical Model for AlGaN/GaN Power HEMTs with P-Gan Gate

A Postprocessing-Technique-Based Switching Loss Estimation Method for GaN Devices