A Survey on Modeling of SiC IGBT

Yuwei Wu,Laili Wang,Jianpeng Wang,Feng Zhang

DOI: https://doi.org/10.1109/wipdaasia51810.2021.9656094

2021-01-01

Abstract:SiC IGBT is an emerging device in ultrahigh-voltage power electronic field. With the development of the device manufacture, the circuit models for it have emerged since 2012. First, the behavior of SiC IGBT is briefly introduced from material characteristics, static characteristic and dynamic characteristics. Then, the SiC IGBT circuit models proposed in public are reviewed. All the models are classified into three types, which are the derived models with modified material parameters, the derived models with modified special structure and other new models. The classification guides the scientists who intend to develop models for SiC IGBT or other promising devices. Each of the models is introduced in detail from its mechanism, specialty and simulation performance. Finally, the paper is concluded and the outlook in SiC IGBT modeling is discussed.